Effect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon Sensors

T.D Dzhafarov; S. Aydin; D. Oren

doi:10.4028/www.scientific.net/SSP.131-133.189

Paper Titles

Oxygen Dimers and Related Defects in Plastically Deformed Silicon
p.161

Enhanced Oxygen Precipitation during the Czochralski Crystal Growth
p.167

Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si
p.175

Detection of Nickel in Silicon by Recombination Lifetime Measurements
p.183

Effect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon Sensors
p.189

SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon
p.195

Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing
p.201

Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon
p.207

Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon
p.213

HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Effect of Diffusion of I Group Metal (Ag) on...

Effect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon Sensors

Abstract:

Current-voltage characteristics of Schottky-type Ag/Porous Silicon (Ag/PS) structures in normal air, humid ambient and in different hydrogen-containing solutions (distilled water, freshwater, Black sea-water, ethanol ad methanol) have been investigated. Generation of the opencircuit voltage (Voc), short-circuit current (Jsc) up to 560 mV and 0.5mA/cm2, respectively, on placing Ag/PS structures in hydrogen-containing solutions was discovered. This phenomenon is reversible, i.e. placing and removal of Ag/PS structures cell from hydrogen-containing solutions is accompanied by response and recovery of the Voc and Jsc parameters. It is shown that the thermal annealing of the Ag/PS structure at 200oC for 10 min is accompanied by somewhat changes and stabilization of Voc and Jsc parameters of Ag/PS sensors. The possible mechanisms related with hydrogen-stimulated generation of voltage and diffusion-stimulated stabilization of the sensing parameters of Ag/PS Schottky-type structures is suggested. Data received in this work indicate on perspectivity of using Ag/PS structures as both the gas sensors and hydrogen cells.