Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium
Results are presented of a comparative study of carrier lifetime in silicon and germanium. The impact of surface quality and passivation, of dopant type and concentration and of metallic impurities is studied using microwave probed free carrier absorption transient techniques.
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
E. Gaubas and J. Vanhellemont, "Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium", Solid State Phenomena, Vols. 131-133, pp. 149-154, 2008