Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium

Abstract:

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Results are presented of a comparative study of carrier lifetime in silicon and germanium. The impact of surface quality and passivation, of dopant type and concentration and of metallic impurities is studied using microwave probed free carrier absorption transient techniques.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

149-154

DOI:

10.4028/www.scientific.net/SSP.131-133.149

Citation:

E. Gaubas and J. Vanhellemont, "Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium", Solid State Phenomena, Vols. 131-133, pp. 149-154, 2008

Online since:

October 2007

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Price:

$35.00

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