Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium

Eugenijus Gaubas; Jan Vanhellemont

doi:10.4028/www.scientific.net/SSP.131-133.149

Paper Titles

Vacancy Clusters in Germanium
p.125

Formation of Hydrogen-Related Shallow Donors in Ge_1-xSi_x Crystals Implanted with Protons
p.131

Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure
p.137

SiGe Heterostructures-on-Insulator Produced by Ge⁺-Ion Implantation and Subsequent Hydrogen Transfer
p.143

Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium
p.149

Impact of NiSi₂ Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon
p.155

Oxygen Dimers and Related Defects in Plastically Deformed Silicon
p.161

Enhanced Oxygen Precipitation during the Czochralski Crystal Growth
p.167

Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si
p.175

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Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium

Abstract:

Results are presented of a comparative study of carrier lifetime in silicon and germanium. The impact of surface quality and passivation, of dopant type and concentration and of metallic impurities is studied using microwave probed free carrier absorption transient techniques.

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Periodical:

Solid State Phenomena (Volumes 131-133)

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149-154

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https://doi.org/10.4028/www.scientific.net/SSP.131-133.149

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Online since:

October 2007

Authors:

Eugenijus Gaubas, Jan Vanhellemont

Keywords:

Carrier Lifetime, Germanium, Infrared, Metal Contamination, Micro-Wave, Silicon

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References

[1] D.K. Schroder: Semiconductor Material and Device Characterization, Ch. 8, p.364, (Wiley Interscience, New York 1990). D.K. Schroder: Carrier lifetime in silicon. In: Handbook of semiconductor silicon technology. Ed. by W.C. O'Mara, R.B. Herring, L.P. Hunt, Noyes Publications, New Jersy (1990).

Google Scholar

[2] J.G. Fossum and D.S. Lee: Sol. St. Electr. 2 (1982), p.741.

Google Scholar

[3] E. Gaubas and J. Vanhellemont, J. Appl. Phys. 80 (1996), p.6293.

Google Scholar

[4] E. Gaubas, Lith. Journ. Phys. 43 (2003), p.145.

Google Scholar

[5] E. Gaubas, J. Vanhellemont, E. Simoen, I. Romandic, W. Geens and P. Clauws: proc. ICDS-24, 22-27 July 2007, Albuquerque, New Mexico, USA, to be published in Physica B.

DOI: 10.1016/j.physb.2007.08.151

Google Scholar

[6] S.M. Ryvkin: Photoelectric Effects in Semiconductors, Ch. 6, Consultants Bureau, New York (1964).

Google Scholar

[7] E. Gaubas and J. Vanhellemont: J. Electrochem. Soc. 154 (2007), p. H231.

Google Scholar

[8] E. Gaubas and J. Vanhellemont: Applied Physics Letters 89 (2006), p.142106.

Google Scholar

[9] J.S. Blakemore: Semiconductor Statistics, Ch. 8, Pergamon Press, (1962).

Google Scholar

[10] R. Conradt and J. Aengenheister: Solid Stat. Comm. 10 (1972), p.321.

Google Scholar

[11] D. Poelman, P. Clauws and B. Depuydt: Solar Energy Materials and Solar Cells 76 (2003), p.167.

DOI: 10.1016/s0927-0248(02)00216-7

Google Scholar

[12] E. Gaubas, J. Vanhellemont, E. Simoen, A. Theuwis and P. Clauws: Mater. Res. Soc. Symp. Proc. 994 (2007), in press.

DOI: 10.1557/proc-0994-f09-06

Google Scholar

[13] B.J. Baliga. Power semiconductor devices. PWS Publishing Company, Boston, (1996).

Google Scholar

[14] V.K. Khanna. Progress in Quantum Electronics 29 (2005) p.59.

Google Scholar