Paper Title
Authors: E.V. Kolesnikova, Evgenia V. Kalinina, Alla A. Sitnikova, M.V. Zamoryanskaya, T.P. Popova
Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin, A.V. Duvanskii, Vitor J.B. Torres, J. Coutinho, R. Jones, Patrick R. Briddon, Nikolay V. Abrosimov, H. Riemann
Abstract:The interstitial carbon impurity (CI) vibrational modes in monocrystalline Si-rich SiGe were investigated by Fourier Transform Infra Red...
Authors: M. Baran, N. Korsunska, L. Khomenkova, T. Stara, V. Khomenkov, Y. Goldstein, E. Savir, J. Jedrzejewski
Abstract:The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays...
Authors: A.L. Quintos Vasques, T.V. Torchynska, G. Polupan, Y. Matsumoto-Kuwabara, L. Khomenkova, L.V. Shcherbyna
Abstract:This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers...
Authors: Nelly Burle, Bernard Pichaud, V.I. Vdovin, M.M. Rzaev
Abstract:First relaxation stages in Si1-x Gex layers on Si substrates are induced by annealing of metastable, low-temperature buffer layer samples...
Authors: I.V. Antonova, M.B. Gulyaev, R.A. Soots, V.A. Seleznev, V.Ya. Prinz
Abstract:The electrical properties of structures included 1-octadecene (CnH2n, n=18) monolayers deposed onto the oxide-free silicon surface or...
Authors: N.Yu. Arutyunov, Valentin V. Emtsev, E. Sayed, Reinhard Krause-Rehberg
Abstract:Angular correlation of annihilation radiation technique (ACAR) has been used for studying a microstructure of the vacancy-group-V-impurity...
Authors: M. Kamruzzaman Chowdhury, B. Vissouvanadin, Mireia Bargallo Gonzalez, N. Bhouri, Peter Verheyen, H. Hikavyy, O. Richard, J. Geypen, H. Bender, Roger Loo, Cor Claeys, Eddy Simoen, V. Machkaoutsan, P. Tomasini, S.G Thomas, J.P. Lu, J.W. Weijtmans, R. Wise
Abstract:This paper presents an investigation of the impact of a Highly Doped Drain (HDD) implantation after epitaxial deposition on Si1-xGex S/D...
Authors: Marie-Laure David, Frédéric Pailloux, Michèl Drouet, Marie France Beaufort, Jean François Barbot, Eddy Simoen, Cor Claeys
Abstract:(001) n-type Ge has been implanted at given fluence and intermediate temperature with hydrogen ions using two processes: conventional...
Authors: Luc Lajaunie, Marie-Laure David, K. Opsomer, Eddy Simoen, Cor Claeys, Jean François Barbot
Abstract:In this study, Co germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Co on Ge, followed by...
Showing 11 to 20 of 105 Paper Titles