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Very First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray Topography

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Abstract:

First relaxation stages in Si1-x Gex layers on Si substrates are induced by annealing of metastable, low-temperature buffer layer samples and observed by X-ray topography (XRT). This method allows observing large area (several square millimetres) of a sample and reveals very low densities of defects, located in the layer as well as in the substrate. It allow to follow the evolution of the very first steps of the relaxation, starting with dislocation crosses which were characterized and evolving to misfit dislocation network by very low increases of thermal budget. It is proposed a nucleation mechanism of these crosses based on Frank loops due to point defects condensation which can transform locally in glide dislocations under the influence of the biaxial stress in the film.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

77-82

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.77

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Online since:

October 2007

Authors:

Nelly Burle, Bernard Pichaud, V.I. Vdovin, M.M. Rzaev

Keywords:

Misfit Dislocation, SiGe/Si Heterostructures, Stress Relaxation, X-Ray Topography

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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