Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers

I.V. Antonova; M.B. Gulyaev; R.A. Soots; V.A. Seleznev; V.Ya. Prinz

doi:10.4028/www.scientific.net/SSP.131-133.83

Paper Titles

Interstitial Carbon-Related Defects in Si_1-xGe_x Alloys
p.59

Effect of Various Treatments on Light Emission Properties of Si-Rich-SiO_x Structures
p.65

Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon
p.71

Very First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray Topography
p.77

Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers
p.83

Configuration of DV Complexes In Ge: Positron Probing of Ion Cores
p.89

Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p⁺/n Si_1-XGe_x Source/Drain Junctions
p.95

Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium
p.101

Co-Germanide Schottky Contacts on Ge
p.107

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Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers

Abstract:

The electrical properties of structures included 1-octadecene (CnH2n, n=18) monolayers deposed onto the oxide-free silicon surface or Si/SiGe/Si layers were analyzed as a function of surface pretreatment (hydrogen- or iodine-terminated silicon surface) and layer deposition regime (thermal- or photo-activated process). Two types of traps (for electrons and holes) were found at the interface between the monolayers and substrate. The density of traps was shown to depend on the, H- or I-termination of the silicon surface, the illumination intensity and deposition time during photo-activated deposition, and the temperature of thermal-activated deposition. The optimal regimes can be chosen for minimization of the surface charge in the structures covered with 1- octadecene monolayers, which provides a high conductivity of thin near-surface layers.