Effect of Various Treatments on Light Emission Properties of Si-Rich-SiOx Structures

M. Baran; N. Korsunska; L. Khomenkova; T. Stara; V. Khomenkov; Y. Goldstein; E. Savir; J. Jedrzejewski

doi:10.4028/www.scientific.net/SSP.131-133.65

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HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Effect of Various Treatments on Light Emission...

Effect of Various Treatments on Light Emission Properties of Si-Rich-SiO_x Structures

Abstract:

The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

65-70

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.65

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Online since:

October 2007

Authors:

M. Baran, N. Korsunska, L. Khomenkova, T. Stara, V. Khomenkov, Y. Goldstein, E. Savir, J. Jedrzejewski

Keywords:

EPR, Photoluminescence (PL), Raman Scattering, Si Crystallites, Silicon Oxide Defect, Si-Rich-SiOx Structures

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