Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon

A.L. Quintos Vasques; T.V. Torchynska; G. Polupan; Y. Matsumoto-Kuwabara; L. Khomenkova; L.V. Shcherbyna

doi:10.4028/www.scientific.net/SSP.131-133.71

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HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Size Dependent Photoluminescence of Si...

Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon

Abstract:

This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

71-76

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.71

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Online since:

October 2007

Authors:

A.L. Quintos Vasques, T.V. Torchynska, G. Polupan, Y. Matsumoto-Kuwabara, L. Khomenkova, L.V. Shcherbyna

Keywords:

Amorphous Silicon, HW-CVD, Photoluminescence (PL), Silicon Nanostructure, Temperature Dependence, X-Ray Diffraction (XRD)

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