Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon
This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed.
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
A.L. Q. Vasques et al., "Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon", Solid State Phenomena, Vols. 131-133, pp. 71-76, 2008