Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon

Abstract:

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This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

71-76

DOI:

10.4028/www.scientific.net/SSP.131-133.71

Citation:

A.L. Q. Vasques et al., "Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon", Solid State Phenomena, Vols. 131-133, pp. 71-76, 2008

Online since:

October 2007

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Price:

$35.00

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