Investigation of 4H-SiC Layers Implanted by Al Ions

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Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

53-58

DOI:

10.4028/www.scientific.net/SSP.131-133.53

Citation:

E.V. Kolesnikova et al., "Investigation of 4H-SiC Layers Implanted by Al Ions", Solid State Phenomena, Vols. 131-133, pp. 53-58, 2008

Online since:

October 2007

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$35.00

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