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HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Investigation of 4H-SiC Layers Implanted by Al...

Investigation of 4H-SiC Layers Implanted by Al Ions

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Gettering and Defect Engineering in Semiconductor Technology XII

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

53-58

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.53

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Online since:

October 2007

Authors:

E.V. Kolesnikova, Evgenia V. Kalinina, Alla A. Sitnikova, M.V. Zamoryanskaya, T.P. Popova

Keywords:

High Dose Implantation, Silicon Carbide (SiC)

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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