Co-Germanide Schottky Contacts on Ge

Luc Lajaunie; Marie-Laure David; K. Opsomer; Eddy Simoen; Cor Claeys; Jean François Barbot

doi:10.4028/www.scientific.net/SSP.131-133.107

Paper Titles

Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers
p.83

Configuration of DV Complexes In Ge: Positron Probing of Ion Cores
p.89

Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p⁺/n Si_1-XGe_x Source/Drain Junctions
p.95

Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium
p.101

Co-Germanide Schottky Contacts on Ge
p.107

Internal Dissolution of Buried Oxide in SOI Wafers
p.113

Degradation and their Recovery Behavior of Irradiated GaAlAs LEDs
p.119

Vacancy Clusters in Germanium
p.125

Formation of Hydrogen-Related Shallow Donors in Ge_1-xSi_x Crystals Implanted with Protons
p.131

HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Co-Germanide Schottky Contacts on Ge

Co-Germanide Schottky Contacts on Ge

Abstract:

In this study, Co germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Co on Ge, followed by annealing in vacuum at 700°C. The influence of annealing time was investigated on both the electrical properties of Co germanide Schottky barrier diodes and on the phase formation on n-Ge (100) substrate. With increasing annealing times growing or transformation of germanide entities occurs leading to reduction of the trap concentration and therefore the leakage current.

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Solid State Phenomena (Volumes 131-133)

Pages:

107-112

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.107

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Online since:

October 2007

Authors:

Luc Lajaunie, Marie-Laure David, K. Opsomer, Eddy Simoen, Cor Claeys, Jean François Barbot

Keywords:

Cobalt, Deep Level, Germanium, Phase, Point Defect

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