Co-Germanide Schottky Contacts on Ge
In this study, Co germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Co on Ge, followed by annealing in vacuum at 700°C. The influence of annealing time was investigated on both the electrical properties of Co germanide Schottky barrier diodes and on the phase formation on n-Ge (100) substrate. With increasing annealing times growing or transformation of germanide entities occurs leading to reduction of the trap concentration and therefore the leakage current.
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
L. Lajaunie et al., "Co-Germanide Schottky Contacts on Ge", Solid State Phenomena, Vols. 131-133, pp. 107-112, 2008