Co-Germanide Schottky Contacts on Ge

Abstract:

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In this study, Co germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Co on Ge, followed by annealing in vacuum at 700°C. The influence of annealing time was investigated on both the electrical properties of Co germanide Schottky barrier diodes and on the phase formation on n-Ge (100) substrate. With increasing annealing times growing or transformation of germanide entities occurs leading to reduction of the trap concentration and therefore the leakage current.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

107-112

DOI:

10.4028/www.scientific.net/SSP.131-133.107

Citation:

L. Lajaunie et al., "Co-Germanide Schottky Contacts on Ge", Solid State Phenomena, Vols. 131-133, pp. 107-112, 2008

Online since:

October 2007

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Price:

$35.00

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