Internal Dissolution of Buried Oxide in SOI Wafers

Abstract:

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High temperature anneal of SOI wafers in oxygen-free atmosphere results in internal buried oxide dissolution and top Si layer etching. Dissolution rate is determined by interstitial oxygen diffusion through the top Si layer and evaporation from the top Si surface in the form of SiO. It has been observed that kinetics of the process follows linear-parabolic law. Simple thermodynamic model is proposed, which explains observed dependences on temperature and top Si layer thickness.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

113-118

DOI:

10.4028/www.scientific.net/SSP.131-133.113

Citation:

O. Kononchuk et al., "Internal Dissolution of Buried Oxide in SOI Wafers", Solid State Phenomena, Vols. 131-133, pp. 113-118, 2008

Online since:

October 2007

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Price:

$35.00

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