Solid State Phenomena
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Vol. 137
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Solid State Phenomena
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Solid State Phenomena
Vol. 134
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Solid State Phenomena
Vols. 131-133
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Solid State Phenomena
Vol. 130
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Solid State Phenomena
Vol. 129
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Vol. 127
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Solid State Phenomena
Vols. 124-126
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Solid State Phenomena
Vols. 121-123
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Solid State Phenomena Vols. 131-133
Paper Title Page
Abstract: Luminescence properties of silicon light emitting diodes with engineered dislocation loops were
investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical
p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band)
and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band
signal intensity were performed. The results are in agreement with the model for dislocation
luminescence, which suggests rediative transition between two, dislocation-related shallow levels.
A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier
injection level in electroluminescence and photoluminescence. A supposition about existence of
strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely,
in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected
charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the
data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak
at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.
303
Abstract: Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been used
to compare hydrogen defects formed in p doped [001] oriented Cz silicon samples which are H+
plasma treated , H+ implanted or Si+ implanted + H+ plasma treated. Samples were studied as
processed and after annealing at 250°C, 450°C and 600°C. It is found that 1 hour H+ plasma
treatment at 250°C produces a low density of large defects (~100 nm) in prefered {111} plans close
to the surface. H+ implantation at a dose of 3x1016 cm-2 produces high density of small (~ 20 nm)
mostly {100} platelets that after 1 hour annealing at 450°C result in microcrack formation. Lower
H+ implantation doses form very few microcracks at this temperature. Silicon implantation with a
dose of 1015 cm2 followed by 1 hour H+ plasma treatment at 250°C and 1 hour annealing at 450°C
produces similar microstructure and microcracks as the 3x1016 cm2 H+ implantation dose.
309
Abstract: Hydrogenated n and p doped Czochralski Si substrates have been studied by means of atomic force
microscopy, scanning and transmission electron microscopy, Raman spectroscopy and microwave
photoconductivity decay techniques. The measurements show that the surface is roughest in ndoped
samples which are plasma treated at high frequency. The cone density was found to be
highest on p-doped samples, which correlates well to the higher density of defects observed in pdoped
samples. The surface cones were found to consist of nanograins, twins and stacking faults
with random orientations, several hydrogen induced defects and bubbles. The size, density and
formation depth of the subsurface defects were seen to depend on doping type, doping level, plasma
frequency and hydrogenation time. Raman spectroscopy shows formation of nearly free hydrogen
molecules, which are presumed to be located in nano-voids or platelets. These molecules dissolved
at temperatures around 600°C. By means of the &-PCD measurements, it is demonstrated that
hydrogen-initiated structural defects act as active recombination centres, which are responsible for
the degradation of the minority carrier lifetime.
315
Abstract: This paper describes a series of electrical measurements and sample modifications that
enabled the electrical properties of hybrid-orientation direct silicon bonded wafer interfaces to be
determined. It is shown that the carrier transport across this near-surface (110)Si/(100)Si boundary
is dictated by the defects present at the bond interface. These interface states are believed to pin the
Fermi-level, producing a conduction barrier with a thermal activation energy Ea = 0.56eV. The
defect band has been identified by deep-level transient spectroscopy and associated with the defect
states typically observed in plastically deformed silicon. The carrier transport behavior across the
bonding interface, as well as the observed interface trap levels are therefore attributed to the
dislocation network present at the bonding interface. The spatial uniformity of the interface
properties have been evaluated by TEM, electron-beam induced current microscopy,
photoconductive decay and conduction measurements.
321
Abstract: The structure studies of single crystalline silicon implanted at 340 K or 610 K with Mn+
ions (Si:Mn) and subsequently processed under atmospheric and enhanced hydrostatic pressure at
up to 1270 K are reported. The defect structure was determined by an analysis of
X-ray diffuse scattering around the 004 reciprocal lattice point and by electron microscopy. High
resolution X-ray diffraction techniques based on the conventional source of radiation were used for
this purpose. The crystal structure of Si:Mn and the Si1-xMnx precipitates in the implantation –
disturbed layer were studied by synchrotron radiation diffraction in the grazing incidence
geometry. Processing of Si:Mn results in crystallization of amorphous Si within the buried
implantation – disturbed layer and in formation of Mn4Si7 precipitates. Structural changes are
dependent both on temperature of the Si substrate at implantation and on processing parameters.
327
Abstract: The main goal of this work is to investigate the influence of low-temperature argon ionbeam
treatment on the electric and structural properties of a near-surface region of the standard
commercial p-type Cz Si wafers, and to compare the effects of Ar+ and H+ ion-beam treatment. The
measurements of thermo-EMF have shown that both Ar+ and H+ ion-beam treatment with the ion
energy 200 eV and current density 0.15 mA/cm2 at a temperature of 30 oC during 30 min leads to
the p-to-n −type overcompensation of the near-surface layer of silicon wafers. The measurements of
photovoltage spectra have shown that (i) Ar+ and H+ treatments in like manner lead to the
appearance of a photovoltage signal over a wide spectral region due to the formation of p-n-junction
on the treated surface, and (ii) photosensitivity of the Ar+ ion-beam treated wafers in the ultraviolet
(UV) spectral region (200-400 nm) is much greater as compared to the wafers subjected to H+ ion
beam treatment in the same conditions. The main difference in the Ar+ and H+ ion-beam treatment
effects is the formation of a thin (5-20 nm) oxygen-containing dielectric layer on the surface of
hydrogenated samples and the absence of such layer in case of Ar+ ion-beam treatment.
333
Abstract: SIMOX (Separation-by-Implantation-of-Oxygen) is an established technique to
fabricate silicon-on-insulator (SOI) structures by oxygen ion implantation into silicon. The main
problem of SIMOX is the very high oxygen ion fluence and the related defects. It is demonstrated
that vacancy defects promote and localize the oxide growth. The crucial point is to control the
distribution of vacancies. Oxygen implantation generates excess vacancies around RP/2 which act
as trapping sites for oxide growth outside the region at the maximum concentration of oxygen at
RP. The introduction of a narrow cavity layer by He implantation and subsequent annealing is
shown to be a promising technique of defect engineering. The additional He implant does not
initiate oxide growth in the top-Si layer of SOI.
339
Abstract: The type and density of the point defects that are generated in the Si surface layer during
thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time,
impurity content. Interaction between the point defects with extended defects and impurities affects
the SiO2 structure and Si-SiO2 interface properties. Hydrogen adsorption on n- and p- type wafers
is different. One possible reason for that can be the strength of the magnetic interaction between the
hydrogen and paramagnetic impurities of the adsorbent. The influence of point defects and
impurities may be diminished and the interface properties improved by an appropriate choice of the
oxidation conditions and postoxidation laser irradiation.
345
Abstract: Fast neutron irradiations on pre-treated Cz-grown silicon were carried out. The pretreatments
involved thermal anneals at 450 oC and 650 oC under high hydrostatic pressure. We
mainly examined, by means of IR spectroscopy, the effect of pre-treatments on the production of
the oxygen-vacancy (VO) pair. The amplitude of the VO band was found independent on the 450
oC treatment although the amplitudes of the TDs bands were reduced. On the other hand, the
amplitude of the VO band was found lower in the samples treated at 650 oC, indicating an influence
on the production of the oxygen-vacancy defects. The results are discussed and explanations are
suggested concerning possible interactions between thermal and radiation defects.
351
Abstract: We have designed a set of experiments in which a controlled supersaturation of vacancies
can be maintained constant during annealing of a boron implant. In presence of voids, a remarkable
reduction of boron diffusivity is observed and, for low fluence B implantation, TED can be totally
suppressed. We show that the presence of nanovoids in the B implanted region is not a prerequisite
condition for the reduction of B diffusivity. Large voids located at more than 100 nm apart from the
B profile still show the same effect. Small voids can also be used to increase the activation of boron.
All these results are consistent with the hypothesis that, during annealing, vacancies are injected
from the voids region towards the Is rich region in the implanted region where they massively
recombine. Finally, we show that BICs cannot be simply dissolved by injecting vacancies into the
region where they stand.
357