Gettering and Defect Engineering in Semiconductor Technology XII

Volumes 131-133

doi: 10.4028/

Paper Title Page

Authors: Łukasz Gelczuk, Grzegorz Jóźwiak, Marcin Motyka, Maria Dąbrowska-Szata

Abstract: The studies of electrical activity of deep electron traps and the optical response of partially-strain relaxed InxGa1-xAs layers (x=5.5%,...

Authors: Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte, Lucia Romano, Maria Grazia Grimaldi, Vito Raineri
Authors: Niki Mitromara, J.H. Evans-Freeman, Ray Duffy

Abstract: We have carried out DLTS in highly doped p+n Ultra Shallow Junctions (USJ) in Si formed by ion implantation. The samples were implanted...

Authors: Teimuraz Mchedlidze, T. Wilhelm, X. Yu, Tzanimir Arguirov, G. Jia, Manfred Reiche, Martin Kittler

Abstract: Regular dislocation networks formed as a result of the direct bonding of Cz-Si wafers with oxide remnants on the pre-bonding surfaces were...

Authors: Kathrin Niemietz, Kay Dornich, Torsten Hahn, A. Helbig, Stefan Hellwig, Karl Heinz Stegemann, J.R. Niklas

Abstract: With an innovative measurement technique termed “microwave detected photoconductivity” (MDP) it is possible to investigate defects of...

Authors: Francesco Ruffino, Filippo Giannazzo, Fabrizio Roccaforte, Vito Raineri, Maria Grazia Grimaldi

Abstract: In this work, a methodology, based on a self-organization process, to form gold nanoclusters on the 6H-SiC surface, is illustrated. By...

Authors: Benjamin Khong, Marc Legros, Philippe Dupuy, Colette Levade, Guy Vanderschaeve

Abstract: Microstructural analysis of power devices were carried out on components from Freescale Semiconductor that underwent extreme...

Authors: Eugene B. Yakimov

Abstract: Calculation of relation between the EBIC contrast and the recombination strength for dislocations and quasi-two-dimensional dislocation...

Authors: P. Werner

Abstract: The generation of semiconductor nanowires (NWs) by a “bottom-up” approach is of technological interest for the development of new...

Authors: I.V. Antonova, M.B. Gulyaev, V.A. Skuratov, D.V. Marin, E.V. Zaikina, Z.S. Yanovitskaya, J. Jedrzejewski, I. Balberg

Abstract: Samples with layer of silicon nanocrystals embedded in SiO2 (the single phase Si content in oxide ranged between 5 and 92 volume %) were...


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