DLTS and PR Studies of Partially Relaxed InGaAs/GaAs Heterostructures Grown by MOVPE

Abstract:

The studies of electrical activity of deep electron traps and the optical response of partially-strain relaxed InxGa1-xAs layers (x=5.5%, 7.7% and 8.6%) grown by metalorganic vapourphase epitaxy (MOVPE) have been performed by means of deep-level transient spectroscopy (DLTS) and photoreflectance (PR). DLTS measurements revealed two electron traps. One of the trap has been attributed to electron states at α-type misfit dislocations. The other trap has been ascribed to the EL2 point defect. The PR spectra at room temperature were measured and analysed. By applying the results of theoretical calculations which include excitonic and strain effects, we were able to estimate the extent of strain relaxation and the values of residual strain in the partially relaxed epitaxial layers.

• Periodical: Solid State Phenomena (Volumes 131-133)
• Pages: 485-490
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.131-133.485
• Online since: October 2007
• Authors: Łukasz Gelczuk, Grzegorz Jóźwiak, Marcin Motyka, Maria Dąbrowska-Szata
• Keywords: Deep Level, Dislocation, DLTS, InGaAs, PR Spectroscopy, Strain and Relaxation

References

[1] F.H. Pollak, in: Semiconductors and Semimetals, edited by T.P. Pearsall, Vol. 32 (Academic, New York, 1990), p.17.

[2] E.R. Weber, Physica B Vol. 340-342 (2003), p.1.

[3] D.V. Lang, J. Appl. Phys. Vol. 45 (1974), p.3023.

[4] Ł. Gelczuk, M. Dąbrowska-Szata, G. Jóźwiak, Mat. Sci. Vol. 23 (2005), p.625.

[5] W. Schröter, J. Kronewitz, U. Gnauert, F. Riedel, M. Seibt, Phys. Rev. B Vol. 52 (1995), p.13726.

DOI: 10.1103/physrevb.52.13726

[6] R.S. Goldman, K.L. Kavanagh, H.H. Wieder, S.N. Ehrlich, R.M. Feenstra, J. Appl. Phys. Vol. 83 (1998), p.5137.

[7] Ł. Gelczuk, J. Serafińczuk, P. DłuŜewski, G. Jóźwiak, M. Dąbrowska-Szata, submitted to Journal of Physics: Condensed Matter (2007).

[8] I. Yonenaga, J. Phys. III France Vol. 7 (1997), p.1435.

[9] J. Misiewicz, P. Sitarek, G. Sek, R. Kudrawiec, Materials Science Vol. 21 (2003), p.263.

[10] D. E. Aspnes, Surf. Sci. Vol. 37 (1973), p.418.

[11] H. Lefevre, M. Schulz, Appl. Phys. Vol. 12 (1977), p.45.

[12] Ł. Gelczuk, M. Dąbrowska-Szata, G. Jóźwiak, D. Radziewicz, Physica B 388 (2007) 195-199.

DOI: 10.1016/j.physb.2006.05.426

[13] Ł. Gelczuk, M. Dąbrowska-Szata, G. Jóźwiak, D. Radziewicz, J. Serafińczuk, P. DłuŜewski, Phys. Status Solidi c (2007), in press.

DOI: 10.1002/pssc.200675467

[14] T. Wosiński, O. Yastrubchak, A. Mąkosa, T. Figielski, J. Phys.: Condens. Master Vol. 12 (2000), p.10153.

[15] T. Wosiński, J. Appl. Phys. Vol. 65 (1989), p.1566.

[16] O. Yastrubchak, T. Wosiński, A. Mąkosa, T. Figielski, A.L. Tóth, Physica B Vol. 308-310 (2001), p.757.

DOI: 10.1016/s0921-4526(01)00828-6

[17] G.P. Watson, D.G. Ast, T.J. Anderson, B. Pathangey, Y. Hayakawa, J. Appl. Phys. Vol. 71 (1992), p.3399.

[18] Y. Uchida, H. Kakibayashi, S. Goto, J. Appl. Phys. Vol. 74 (1993), p.6720.

[19] G. Jóźwiak, M. Dąbrowska, Ł. Gelczuk, Proc. of XVI ICSS, Wrocław 2007, accepted.