Electrical Activation and Carrier Compensation in Si and Mg Implanted GaN by Scanning Capacitance Microscopy

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Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

491-496

DOI:

10.4028/www.scientific.net/SSP.131-133.491

Citation:

F. Giannazzo et al., "Electrical Activation and Carrier Compensation in Si and Mg Implanted GaN by Scanning Capacitance Microscopy", Solid State Phenomena, Vols. 131-133, pp. 491-496, 2008

Online since:

October 2007

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$35.00

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