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Electrical Activation and Carrier Compensation in Si and Mg Implanted GaN by Scanning Capacitance Microscopy

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Gettering and Defect Engineering in Semiconductor Technology XII

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

491-496

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.491

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Online since:

October 2007

Authors:

Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte, Lucia Romano, Maria Grazia Grimaldi, Vito Raineri

Keywords:

Gallium Nitride (GaN), Mg Implantation, Scanning Capacitance Microscopy, Si-Implantation

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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