Deep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by Implantation

Abstract:

Article Preview

We have carried out DLTS in highly doped p+n Ultra Shallow Junctions (USJ) in Si formed by ion implantation. The samples were implanted either with a 10keV or a 5keV B implant at a dose of 5*1015cm15. The 10keV sample was also implanted with P and the 5keV samples were implanted with P and increasing doses of As to simulate an USJ in an n-well. Due to the high P and/or As implant doses, it was observed that a band offset also exists between the n-type implanted region and the n-type starting material. Therefore these samples contain another depletion region apart from the expected p+n depletion region. However, the electric fields in these regions act in opposite directions assisting the profiling of different regions after careful selection of biasing conditions. A deep state is observed in the n-type region at EC-0.34eV which has a complex Laplace DLTS signature, which has arisen due to the implantation process.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

497-502

DOI:

10.4028/www.scientific.net/SSP.131-133.497

Citation:

N. Mitromara et al., "Deep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by Implantation", Solid State Phenomena, Vols. 131-133, pp. 497-502, 2008

Online since:

October 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.