On the Failure of Intelligent Power Devices Induced by Extreme Electro-Thermal Fatigue. A Microstructural Analysis

Abstract:

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Microstructural analysis of power devices were carried out on components from Freescale Semiconductor that underwent extreme electro-thermal fatigue. Several destructive and non destructive techniques were used. It is shown that the main cause of devices failure is delamination between the heat sink and the power die. Additional causes of failure are identified. The fatigue-induced modifications of the structure of the metallization layer (grain growth, grain boundary grooving) is also discussed.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

523-528

DOI:

10.4028/www.scientific.net/SSP.131-133.523

Citation:

B. Khong et al., "On the Failure of Intelligent Power Devices Induced by Extreme Electro-Thermal Fatigue. A Microstructural Analysis", Solid State Phenomena, Vols. 131-133, pp. 523-528, 2008

Online since:

October 2007

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Price:

$35.00

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