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On the Failure of Intelligent Power Devices Induced by Extreme Electro-Thermal Fatigue. A Microstructural Analysis

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Abstract:

Microstructural analysis of power devices were carried out on components from Freescale Semiconductor that underwent extreme electro-thermal fatigue. Several destructive and non destructive techniques were used. It is shown that the main cause of devices failure is delamination between the heat sink and the power die. Additional causes of failure are identified. The fatigue-induced modifications of the structure of the metallization layer (grain growth, grain boundary grooving) is also discussed.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

523-528

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.523

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Online since:

October 2007

Authors:

Benjamin Khong, Marc Legros, Philippe Dupuy, Colette Levade, Guy Vanderschaeve

Keywords:

Electro-Thermal Fatigue, Failure Of Power Devices, Grain Growth, Metallization

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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