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HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133EBIC Investigations of Deformation Induced Defects...

EBIC Investigations of Deformation Induced Defects in Si

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Abstract:

Calculation of relation between the EBIC contrast and the recombination strength for dislocations and quasi-two-dimensional dislocation trails has been carried out taking into account the real values of depletion region width. Using the relations obtained the linear defect density along dislocations and sheet density in dislocation trails are estimated. The results of EBIC investigations of dislocations and dislocation trails in plastically deformed n- and p-Si are analyzed.

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Gettering and Defect Engineering in Semiconductor Technology XII

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

529-534

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.529

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Online since:

October 2007

Authors:

Eugene B. Yakimov

Keywords:

Dislocation, Dislocation Trail, EBIC, Excess Carrier Recombination, Silicon

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Alexander and H. Teichler: Mater. Sci. Technology Vol. 4 (1991) p.249.

[2] E.A. Steinman and E.B. Yakimov, in: Properties of Crystalline Silicon, edited by R. Hull INSPEC, London (1999) p.653.

[3] W. Schröter and H. Cerva: Solid State Phenom. Vol. 85-86 (2002), p.67.

[4] E.B. Yakimov: J. Phys. III Vol. 7 (1997) p.2293.

[5] Z.J. Radzimski, T.Q. Zhou, A.B. Buczkowski and G.A. Rozgonyi: Appl. Phys. Lett. Vol. 60 (1991) p.1096.

[6] O.V. Kononchuk, V.V. Nikitenko, V.I. Orlov and E.B. Yakimov: Phys. Stat. Sol. (a) Vol. 143 (1994) p. K5.

[7] M. Kittler, C. Ulhaq-Bouillet and V. Higgs: Mater. Sci. Engineer. B Vol. 24 (1994) p.52.

[8] I.E. Bondarenko, V.G. Eremenko, B. Ya. Farber et al: Phys. Stat. Sol. (a) Vol. 68 (1981) p.53.

[9] O.V. Feklisova, E.B. Yakimov and N. Yarykin: Physica B Vol. 340-342 (2003) p.1005.

[10] V.G. Eremenko and E.B. Yakimov: Eur. Phys. J., Appl. Phys. Vol. 27 (2004) p.349.

[11] O.V. Feklisova, B. Pichaud and E.B. Yakimov: Phys. Stat. Sol. (a) Vol. 202 (2005) p.896.

[12] H. J. Leamy: J. Appl. Phys. Vol. 53 (1982), p. R51.

[13] E. Yakimov: Scanning Microsc. Vol. 6 (1992), p.81.

[14] I.E. Bondarenko and E.B. Yakimov: Phys. Stat. Sol. (a) Vol. 122 (1990) p.121.

[15] C. Donolato: Semicond. Sci. Technol. Vol. 7 (1992), p.37.

[16] C. Donolato: J. Appl. Phys. Vol. 54 (1983), p.1314.

[17] V.V. Sirotkin, E.B. Yakimov and S.I. Zaitsev: Mater. Sci. Engineer. B Vol. 42 (1996) p.176.

[18] V.V. Sirotkin and E.B. Yakimov: Inst. Phys. Conf. Ser. No 160 (1997) p.79.

[19] E.B. Yakimov: J. Phys.: Condens. Matter. Vol. 14 (2002) p.13069.

[20] O.V. Feklisova, E.B. Yakimov, N. Yarykin and B. Pichaud: J. Phys.: Condens. Matter. Vol. 16 (2004) p. S201.

DOI: 10.1088/0953-8984/16/2/023

[21] O.V. Feklisova, G. Mariani-Regula, B. Pichaud and E.B. Yakimov: Phys. Stat. Sol. (a) Vol. 171 (1999) p.341.

DOI: 10.1002/(sici)1521-396x(199901)171:1<341::aid-pssa341>3.0.co;2-9

[22] M. Kittler, W. Seifert and O. Krüger: Solid State Phenom. Vol. 78-79 (2001), p.39.

[23] I. Bondarenko, O. Kononchuk, V. Sirotkin and E. Yakimov: Mater. Sci. Engineer. B Vol. 42 (1996) p.270.

[24] V. Kveder, M. Kittler and W. Schröter: Phys. Rev. B Vol. 63 (2001) 115208.

[25] I.E. Bondarenko, H. Blumtritt, J. Heydenreich et al: Phys. Stat. Sol. (a) Vol. 95 (1986) p.173.

[26] O.V. Feklisova, E.B. Yakimov: Phys. Stat. Sol. (c) Vol. 4 (2007) to be published.