Hydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy.

Daniela Cavalcoli; Marco Rossi; Andrea Tomasi; Anna Cavallini; Danny Chrastina; Giovanni Isella

doi:10.4028/www.scientific.net/SSP.131-133.547

Paper Titles

On the Failure of Intelligent Power Devices Induced by Extreme Electro-Thermal Fatigue. A Microstructural Analysis
p.523

EBIC Investigations of Deformation Induced Defects in Si
p.529

Growth and Properties of Silicon Nanowires for Low-Dimensional Devices
p.535

Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation
p.541

Hydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy.
p.547

Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation
p.553

Properties of Nanostructure Formed on SiO₂/Si Interface by Laser Radiation
p.559

Erbium Doped Materials for a Si-Based Microphotonics
p.563

Regular Dislocation Networks in Silicon. Part I: Structure
p.571

HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Hydrogenated Nanocrystalline Silicon Thin Films...

Hydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy.

Abstract:

Hydrogenated nanocrystalline silicon for photovoltaic applications has been investigated. Morphological properties, as well as electrical properties, have been investigated with high spatial resolution by scanning force microscopy analyses (AFM, Atomic Force Microscopy and C-AFM conductive AFM). A major problem regarding the electronic properties is to understand where the current flows. The present contribution aims to clarify which of the material phases mainly contributes to the conduction mechanism.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XII

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

547-552

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.547

Citation:

Cite this paper

Online since:

October 2007

Authors:

Daniela Cavalcoli, Marco Rossi, Andrea Tomasi, Anna Cavallini, Danny Chrastina, Giovanni Isella

Keywords:

Atomic Force Microscope (AFM), Nanocrystalline Silicon, Solar Cell

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] A. V. Shah, J. Meier, E. Vallat-Sauvain, N. Wyrsch, U. Kroll, C. Droz, U. Graf, Sol. Energy Mater. Sol. Cells 78 (2003) 469.

DOI: 10.1016/s0927-0248(02)00448-8

Google Scholar

[2] S Fukuda, K Yamamoto, A Nakajima, M Yoshimi, T Sawada, T Suezaki, M Ichikawa, Proc of the 21 st European Photovoltaic Solar Energy Conf. Dresden, Germany 2006, p.1535.

Google Scholar

[3] B. Rezek, J. Stuchlík, A. Fejfar, J. Kočka, Appl. Phys. Lett. 74 (1999) 1475.

Google Scholar

[4] D. Azulay, I. Balberg, V. Chu, J. P. Conde, O. Millo, Phys. Rev. B 71 (2005) 113304.

Google Scholar

[5] S. Binetti, M. Acciarri, M. Bollani, L. Fumagalli, H. von Känel, S. Pizzini, Thin Solid Films 487 (2005) 19. 1000 nm 1000 nm Figure 5. AFM (left) and C-AFM (right) maps of one sample of series 3. The two maps were obtained simultaneously.

DOI: 10.1016/j.tsf.2005.01.028

Google Scholar

[6] S. Pizzini, M. Acciarri, S. Binetti, D. Cavalcoli, A. Cavallini, D. Chrastina, L. Colombo, E. Grilli, G. Isella, M. Lancin, A. Le Donne, A. Mattoni, K. Peter, B. Pichaud, E. Poliani, M. Rossi, S. Sanguinetti, M. Texier, H. von Känel, Mater. Sci. Eng. B 134 (2006).

DOI: 10.1016/j.mseb.2006.06.038

Google Scholar

[7] M. Texier, M. Acciarri, S. Binetti, D. Cavalcoli, A. Cavallini, D. Chrastina, G. Isella, M. Lancin, A. Tomasi, B. Pichaud, S. Pizzini, M. Rossi, Microscopy of Semiconducting Materials, 2007 in press.

DOI: 10.1007/978-1-4020-8615-1_66

Google Scholar

[8] www. nanophoto. unimib. it.

Google Scholar