Erbium Doped Materials for a Si-Based Microphotonics

F. Priolo; G. Franzò; F. Iacona; A. Irrera; R. Lo Savio; M. Miritello; E. Pecora

doi:10.4028/www.scientific.net/SSP.131-133.563

Paper Titles

Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation
p.541

Hydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy.
p.547

Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation
p.553

Properties of Nanostructure Formed on SiO₂/Si Interface by Laser Radiation
p.559

Erbium Doped Materials for a Si-Based Microphotonics
p.563

Regular Dislocation Networks in Silicon. Part I: Structure
p.571

Mono- and Polycrystalline Silicon for Terahertz Intracenter Lasers
p.579

Dislocation Photoluminescence in Silicon and Germanium
p.583

Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application
p.589

HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Erbium Doped Materials for a Si-Based...

Erbium Doped Materials for a Si-Based Microphotonics

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Solid State Phenomena (Volumes 131-133)

Pages:

563-570

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.563

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Online since:

October 2007

Authors:

F. Priolo, G. Franzò, F. Iacona, A. Irrera, R. Lo Savio, M. Miritello, E. Pecora

Keywords:

Erbium, Photoluminescence (PL), Silicon Nanoclusters

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