Regular Dislocation Networks in Silicon. Part I: Structure

Abstract:

• Periodical: Solid State Phenomena (Volumes 131-133)
• Pages: 571-578
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.131-133.571
• Online since: October 2007
• Authors: T. Wilhelm, Teimuraz Mchedlidze, X. Yu, Tzanimir Arguirov, Martin Kittler, Manfred Reiche
• Keywords: Dislocation, Dislocation Network, Wafer Bonding

References

[1] W. Schröter and H. Cerva: Solid State Phenomena Vol. 85-86 (2002), p.67

[2] E.Z. Melikhov and R.M. Farzetdinova: Physica B Bol. 284-288 (2000) p. (1908)

[3] V.V. Kveder, T.R. Mchedlidze, Y.A. Osipyan, and A.I. Shalynin: in: Defect Control in Semiconductors, edited by K. Sumino, North-Holland, Amsterdam (1989) Vol. 2, p.1417

DOI: 10.1016/b978-0-444-88429-9.50074-4

[4] M. Law, J. Goldberger, and P. Yang: Ann. Rev. Mater. Res. Vol. 34 (2004) p.83

[5] T.Y. Tan, S.T. Lee, and U. Gösele: Appl. Phys. A Vol. 74 (2002) p.423

[6] E. Bakkers, J. van Damm, S. de Franceschi, L.P. Kouwenhoven, M. Kaiser, M. Verheijen, H. Wondergem, and P. van der Sluis: Nature Mater. Vol. 3 (2004) p.789

DOI: 10.1038/nmat1235

[7] G. Jia, M. Kittler, Z. Su, D. Yang, and J. Sha: phys. stat. sol. (a) Vol. 203 (2006) p. R55

[8] V.V. Kveder, M. Badlylevich, E. Steinman, A. Izotov, M. Seibt, and W. Schröter: Appl. Phys. Lett. Vol. 84 (2004) p.2106

DOI: 10.1063/1.1689402

[9] T. Mchedlidze, T. Wilhelm, X. Yu, T. Arguirov, M. Reiche, and M. Kittler: Regular dislocation networks in silicon, part II: luminescence, this conference

DOI: 10.4028/www.scientific.net/ssp.131-133.503

[10] Q.-Y. Tong and U. Gösele: Semiconductor Wafer Bonding (Wiley Sons, New York 1999)

[11] R. Gafiteanu, S. Chevacharoenkul, U. Gösele, and T. Y. Tan: Inst. Phys. Conf. Ser. Vol.134 (1993) p.87

[12] M. Benamara, A. Rocher, L. Laanab, A. Claverie, A. La porte, G. Saeabayrousse, L. Lescouzeres, and A. Peyre-Lavigne: C. R. Acad. Sci. Paris Vol. 318 (1994) p.1459

[13] M. Reiche, K. Scheerschmidt, D. Conrad, R. Scholz, A. Plößl, U. Gösele, and K. N. Tu: Inst. Phys. Conf. Ser. Vol. 157 (1997) p.447

[14] T. Akatsu, R. Scholz, and U. Gösele, J. Mater. Sci. Vol. 39 (2004) p.3031

[15] M. Reiche, S. Hopfe, U. Gösele, H. Strutzberg, and Q.-Y. Tong: Jpn. J. Appl. Phys. Vol.35, (1996) p.2102

[16] K. Rousseau, J. Eymery, F. Fournel, J.-P. Morniroli, and J.-L. Rouviere; Phil. Mag. Vol. 85 (2005) p.2415

[17] S. Marklund: phys. stat. sol. (b) Vol. 92 (1979) p.83

[18] W. Wijaranakula: Appl. Phys. Lett. Vol. 59 (1991) p.1185

[19] M. Kittler, M. Reiche, T. Arguirov, W. Seifert, X. Yu, M. Mchedlidze, and T. Wilhelm: ECS Transactions Vol. 3 (2006) p.429

DOI: 10.1149/1.2357081

[20] Y. Ishikawa, K. Yamauchi, C. Yamamoto, and M. Tabe: MRS Symp. Proc. Vol. 864 (2005) p. E6.5.1

[21] M. Kittler, X. Yu, T. Mchedlidze, T. Arguirov, O. F. Vyvenko, W. Seifert, M. Reiche, T. Wilhelm, M. Seibt, O. Voß, A. Wolff, and W. Fritzsche: Small Vol. 3 (2007) p.964

DOI: 10.1002/smll.200600539

[22] W. Bollmann, Crystal defects and crystalline interfaces (Springer Verlag, Berlin, 1970)

[23] M. Reiche, M. Kittler, T. Wilhelm, T. Arguirov, W. Seifert, X. Yu, and T. Mchedlidze: ECS Transactions Vol. 3 (2006) p.311

DOI: 10.1149/1.2357081