Properties of Nanostructure Formed on SiO2/Si Interface by Laser Radiation

Arthur Medvid; Igor Dmitruk; Pavels Onufrijevs; Iryna Pundyk

doi:10.4028/www.scientific.net/SSP.131-133.559

Paper Titles

Growth and Properties of Silicon Nanowires for Low-Dimensional Devices
p.535

Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation
p.541

Hydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy.
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Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation
p.553

Properties of Nanostructure Formed on SiO₂/Si Interface by Laser Radiation
p.559

Erbium Doped Materials for a Si-Based Microphotonics
p.563

Regular Dislocation Networks in Silicon. Part I: Structure
p.571

Mono- and Polycrystalline Silicon for Terahertz Intracenter Lasers
p.579

Dislocation Photoluminescence in Silicon and Germanium
p.583

HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Properties of Nanostructure Formed on SiO2/Si...

Properties of Nanostructure Formed on SiO₂/Si Interface by Laser Radiation

Abstract:

The aim of this work is to study optical properties of Si nanohills formed on the SiO2/Si interface by the pulsed Nd:YAG laser radiation. Nanohills which are self-organized on the surface of Si, are characterized by strong photoluminescence in the visible range of spectra with long wing in the red part of spectra. This peculiarity is explained by Quantum confinement effect in nanohillsnanowires with graded diameter. We have found a new method for graded band gap semiconductor formation using an elementary semiconductor. Graded change of band gap arises due to Quantum confinement effect.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

559-562

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.559

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Online since:

October 2007

Authors:

Arthur Medvid, Igor Dmitruk, Pavels Onufrijevs, Iryna Pundyk

Keywords:

Atomic Force Microscope (AFM), Graded Band Gap, Laser Radiation, Nanohills, Photoluminescence (PL), SiO₂/Si

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