Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation

Abstract:

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Samples with layer of silicon nanocrystals embedded in SiO2 (the single phase Si content in oxide ranged between 5 and 92 volume %) were subjected to high energy ion implantation. Implantation-induced modifications of SiO2-ncSi properties discussed in this paper include a shift of the major ncSi-related photoluminescence peak and intensification of the high-photon energy peaks, that accompany the change in amount and type of the charge trapped on the nanocrystals. A unified model is suggested for all these phenomena.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

541-546

DOI:

10.4028/www.scientific.net/SSP.131-133.541

Citation:

I.V. Antonova et al., "Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation", Solid State Phenomena, Vols. 131-133, pp. 541-546, 2008

Online since:

October 2007

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Price:

$35.00

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