Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation

I.V. Antonova; M.B. Gulyaev; V.A. Skuratov; D.V. Marin; E.V. Zaikina; Z.S. Yanovitskaya; J. Jedrzejewski; I. Balberg

doi:10.4028/www.scientific.net/SSP.131-133.541

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HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Modification of Silicon Nanocrystals Embedded in...

Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation

Abstract:

Samples with layer of silicon nanocrystals embedded in SiO2 (the single phase Si content in oxide ranged between 5 and 92 volume %) were subjected to high energy ion implantation. Implantation-induced modifications of SiO2-ncSi properties discussed in this paper include a shift of the major ncSi-related photoluminescence peak and intensification of the high-photon energy peaks, that accompany the change in amount and type of the charge trapped on the nanocrystals. A unified model is suggested for all these phenomena.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

541-546

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.541

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Online since:

October 2007

Authors:

I.V. Antonova, M.B. Gulyaev, V.A. Skuratov, D.V. Marin, E.V. Zaikina, Z.S. Yanovitskaya, J. Jedrzejewski, I. Balberg

Keywords:

Charge, Ion Implantation, Photoluminescence (PL), Si Nanocrystal, SiO₂ Matrix

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