Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation
Samples with layer of silicon nanocrystals embedded in SiO2 (the single phase Si content in oxide ranged between 5 and 92 volume %) were subjected to high energy ion implantation. Implantation-induced modifications of SiO2-ncSi properties discussed in this paper include a shift of the major ncSi-related photoluminescence peak and intensification of the high-photon energy peaks, that accompany the change in amount and type of the charge trapped on the nanocrystals. A unified model is suggested for all these phenomena.
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
I.V. Antonova et al., "Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation", Solid State Phenomena, Vols. 131-133, pp. 541-546, 2008