Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO2 Layers

S. Prucnal; L. Rebohle; Wolfgang Skorupa

doi:10.4028/www.scientific.net/SSP.131-133.595

Paper Titles

Regular Dislocation Networks in Silicon. Part I: Structure
p.571

Mono- and Polycrystalline Silicon for Terahertz Intracenter Lasers
p.579

Dislocation Photoluminescence in Silicon and Germanium
p.583

Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application
p.589

Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO₂ Layers
p.595

Light-Emitting Structures with Near-Band Edge Luminescence for Si Optoelectronics
p.601

The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon
p.607

Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors
p.613

X-Ray Characterization of the Lattice Perfection of Heteroepitaxial SIS Structures
p.619

HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Investigation of the Temperature Degradation and...

Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO₂ Layers

Abstract:

The temperature quenching mechanisms of the electroluminescence (EL) and the reactivation of the rare earth luminescent centres by the flash lamp annealing (FLA) made after hot electron injection into the SiO2 layer implanted by Tb and Gd was investigated. An increase of the temperature from room temperature up to 150oC reduces the gate voltage of about 3 V and increases the rate of the EL quenching process and the degradation of the Metal-Oxide-Silicon Light Emitting Diode (MOSLED) structure by a of factor of three. On the other hand, the post-injection FLA reactivates the RE centres switched off by electrons trapped around them during hot electron impact excitation, increasing the operating time of the MOSLEDs devices.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XII

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

595-600

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.595

Citation:

Cite this paper

Online since:

October 2007

Authors:

S. Prucnal, L. Rebohle, Wolfgang Skorupa

Keywords:

Electroluminescence, Rare Earth (RE), Silicon Dioxide, Temperature Quenching

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] D.J. DiMaria and J.W. Stasiak, J. Appl. Phys. Vol. 65 (1989), p.2342.

Google Scholar

[2] J.M. Sun, W. Skorupa, T. Dekorsy, M. Helm and A.N. Nazarov, Opptical Materials Vol. 27 (2005), p.1050.

Google Scholar

[3] J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle and T. Gebel, J. Appl. Phys. Vol. 97 (2005), p.123513.

DOI: 10.1063/1.1935766

Google Scholar

[4] J.M. Sun, S. Prucnal, W. Skorupa, M. Helm, L. Rebohle and T. Gebel, Appl. Phys. Lett. Vol. 89 (2006), p.091908.

DOI: 10.1063/1.2338892

Google Scholar

[5] J.M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle and T. Gebel, Appl. Phys. Lett. Vol. 85 (2004), p.3387.

DOI: 10.1063/1.1808488

Google Scholar

[6] S. Prucnal, J.M. Sun, W. Skorupa, M. Helm, Appl. Phys. Lett. Vol. 90 (2007), p.181121.

Google Scholar

[7] V.V. Afanasev and V.K. Adamchuk, Progress in Surf. Sci. Vol. 47 (1994), p.301.

Google Scholar

[8] M.V. Fischetti, D.J. DiMaria, S.D. Brorson, T.N. Teis and J.R. Kirtley: Phys. Rev. B Vol. 31 (1985) p.8124.

Google Scholar

[9] D. Arnold, E. Cartier and D.J. DiMaria: Phys. Rev. B Vol. 49 (1994), p.10278.

Google Scholar

[10] S.M. Sze, J. Appl. Phys Vol. 38 (1967), p.2951.

Google Scholar

[11] S.M. Sze, Physics of Semiconductors Devices, Jon Wiley & Sons New York (1981) pp.362-430.

Google Scholar

[12] S. Prucnal, J.M. Sun, H. Reuther, W. Skorupa, and Ch. Buchal, Electochem. Solid-State Lett. Vol. 10 (2007), p. J30.

DOI: 10.1149/1.2404293

Google Scholar