Light-Emitting Structures with Near-Band Edge Luminescence for Si Optoelectronics

Abstract:

Single crystal Si, Si0.948Ge0.052 and Si0.66Ge0.34 diode as well as Ge transistor structures with high electroluminescence (EL) intensities in the region of interband transitions at room temperature were fabricated by different techniques and their luminescence properties were studies. The analysis of the experimental data shows that recombination involving excitons is the dominant mechanism of near-band edge radiative recombination in all the light-emitting structures at room temperature. Some of the structures are characterized by record values of EL intensity and/or external quantum efficiency, so they can be used as effective light emitters for Si optoelectronics.

• Periodical: Solid State Phenomena (Volumes 131-133)
• Pages: 601-606
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.131-133.601
• Online since: October 2007
• Authors: N.A. Sobolev
• Keywords: Defect, Diffusion, Epitaxy, Ge, Ion Implantation, Light Emitting Devices, Luminescence, Silicon, Silicon-Germanium (SiGe)

References

[1] W. Van Roosbroeck and W. Shockley: Phys. Rev. Vol. 94 (1954), p.1558.

[2] M.A. Green, J. Zhao, A. Wang, P.J. Reece and M. Gal: Nature Vol. 412 (2001), p.805.

[3] N.A. Sobolev, A.M. Emel`yanov, E.I. Shek and V.I. Vdovin: Sol. St. Phenomena Vol. 95-96 (2004), p.283.

[4] N.A. Sobolev, A.M. Emel`yanov, E.I. Shek and V.I. Vdovin: Phys. Sol. State Vol. 46 (2004), p.35.

[5] A.M. Emel`yanov, N.A. Sobolev and E.I. Shek: Phys. Sol. State Vol. 46 (2004), p.40.

[6] A.M. Emel`yanov: Technical Phys. Lett. Vol. 30 (2004), p.964.

[7] A.M. Emel`yanov, N.A. Sobolev, T.M. Mel`nikova and N.V. Abrosimov: Semiconductors Vol. 39 (2005), p.1128.

[8] A.M. Emel`yanov, N.A. Sobolev, T.M. Mel`nikova and N.V. Abrosimov: Sol. St. Phenomena Vol. 108-109 (2005), p.761.

[9] N.A. Sobolev, A.M. Emel`yanov, E.I. Shek, N.V. Abrosimov and A.N. Yakimenko: Proc. XVI Intern. Conf. Radiation Phys. of Solid State, (June 3-8, 2006), Sevastopol, Ukraina, p.490 (in Russian).

[10] A.M. Emel'yanov, V.V. Zabrodskiĭ, N.V. Zabrodskaya, N.A. Sobolev and V.L. Sukhanov: Semiconductors Vol. 40 (2006), p.860.

[11] A.M. Emel`yanov and N.A. Sobolev: Semiconductors (2007), in press.

[12] A.M. Emel`yanov and N.A. Sobolev: unpublished.

[13] A.A. Bergh and P.J. Dean: Light-Emitting Diodes (Clarendon Press, Oxford 1976).

[14] R.A. Smith: Semiconductors, 2nd ed. (Cambridge Univ. Press, Cambridge 1978).

[15] D.E. Kane and R.M. Swanson R.M.: J. Appl. Phys. Vol. 73 (1993), p.1193.

[16] J. Weber and M.I. Alonso: Phys. Rev. B Vol. 40 (1989), p.5683.