Light-Emitting Structures with Near-Band Edge Luminescence for Si Optoelectronics
Single crystal Si, Si0.948Ge0.052 and Si0.66Ge0.34 diode as well as Ge transistor structures with high electroluminescence (EL) intensities in the region of interband transitions at room temperature were fabricated by different techniques and their luminescence properties were studies. The analysis of the experimental data shows that recombination involving excitons is the dominant mechanism of near-band edge radiative recombination in all the light-emitting structures at room temperature. Some of the structures are characterized by record values of EL intensity and/or external quantum efficiency, so they can be used as effective light emitters for Si optoelectronics.
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
N.A. Sobolev "Light-Emitting Structures with Near-Band Edge Luminescence for Si Optoelectronics", Solid State Phenomena, Vols. 131-133, pp. 601-606, 2008