Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application

Abstract:

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Silicon crystals, doped with moderate concentration of magnesium or lithium, have been grown for application as optically pumped donor silicon lasers for the terahertz spectral region. The pedestal growth technique accompanied with axial-loaded dopant pills enabled manufacturing of large silicon crystals with a homogeneous donor distribution in the range from 1014 to 1016 cm-3, as required for intracenter silicon lasers. Terahertz-range photoluminescence from the grown crystals has been observed.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

589-594

DOI:

10.4028/www.scientific.net/SSP.131-133.589

Citation:

N. V. Abrosimov et al., "Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application", Solid State Phenomena, Vols. 131-133, pp. 589-594, 2008

Online since:

October 2007

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Price:

$35.00

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