Gettering and Defect Engineering in Semiconductor Technology XII

Volumes 131-133

doi: 10.4028/www.scientific.net/SSP.131-133

Paper Title Page

Authors: Daniela Cavalcoli, Marco Rossi, Andrea Tomasi, Anna Cavallini, Danny Chrastina, Giovanni Isella

Abstract: Hydrogenated nanocrystalline silicon for photovoltaic applications has been investigated. Morphological properties, as well as electrical...

547
Authors: Naoki Fukata, T. Oshima, N. Okada, S. Matsushita, T. Tsurui, J. Chen, Takashi Sekiguchi, K. Murakami

Abstract: The effect of phonon confinement and impurity doping in silicon nanowires (SiNWs) synthesized by laser ablation were investigated. The...

553
Authors: Arthur Medvid, Igor Dmitruk, Pavels Onufrijevs, Iryna Pundyk

Abstract: The aim of this work is to study optical properties of Si nanohills formed on the SiO2/Si interface by the pulsed Nd:YAG laser radiation....

559
Authors: F. Priolo, G. Franzò, F. Iacona, A. Irrera, R. Lo Savio, M. Miritello, E. Pecora
563
Authors: T. Wilhelm, Teimuraz Mchedlidze, X. Yu, Tzanimir Arguirov, Martin Kittler, Manfred Reiche
571
Authors: Sergeij G. Pavlov, Heinz Wilhelm Hübers, Nikolay V. Abrosimov, H. Riemann

Abstract: The performance of optically pumped terahertz silicon lasers with active media made from mono- and polycrystalline silicon doped by...

579
Authors: S. Shevchenko, A.N. Tereshchenko

Abstract: Dislocation photoluminescence (DPL) is studied at 4.2K in plastically deformed germanium single crystals containing predominantly 60fl...

583
Authors: Nikolay V. Abrosimov, N. Nötzel, H. Riemann, K. Irmscher, Sergeij G. Pavlov, Heinz Wilhelm Hübers, Ute Böttger, Philippe M. Haas, N. Drichko, M. Dressel

Abstract: Silicon crystals, doped with moderate concentration of magnesium or lithium, have been grown for application as optically pumped donor...

589
Authors: S. Prucnal, L. Rebohle, Wolfgang Skorupa

Abstract: The temperature quenching mechanisms of the electroluminescence (EL) and the reactivation of the rare earth luminescent centres by the...

595
Authors: N.A. Sobolev

Abstract: Single crystal Si, Si0.948Ge0.052 and Si0.66Ge0.34 diode as well as Ge transistor structures with high electroluminescence (EL) intensities...

601

Showing 91 to 100 of 105 Paper Titles