IR Studies on the Interaction between Thermal and Radiation Defects in Silicon

Abstract:

Fast neutron irradiations on pre-treated Cz-grown silicon were carried out. The pretreatments involved thermal anneals at 450 oC and 650 oC under high hydrostatic pressure. We mainly examined, by means of IR spectroscopy, the effect of pre-treatments on the production of the oxygen-vacancy (VO) pair. The amplitude of the VO band was found independent on the 450 oC treatment although the amplitudes of the TDs bands were reduced. On the other hand, the amplitude of the VO band was found lower in the samples treated at 650 oC, indicating an influence on the production of the oxygen-vacancy defects. The results are discussed and explanations are suggested concerning possible interactions between thermal and radiation defects.

• Periodical: Solid State Phenomena (Volumes 131-133)
• Pages: 351-356
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.131-133.351
• Online since: October 2007
• Authors: Charalamos A. Londos, G.D. Antonaras, M.S. Potsidi, Efstratia N. Sgourou, I.V. Antonova, Andrzej Misiuk
• Keywords: Defect, Hydrostatic Pressure, IR-Spectroscopy, Neutron Irradiation, Silicon

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