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HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Effect of Grown-In Defects on the Structure of...

Effect of Grown-In Defects on the Structure of Oxygen Precipitates in Cz-Si Crystals with Different Diameter

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Abstract:

IR-spectroscopy with computer analysis of the shape of the Si-O absorption band, electron microscopy, X-rays diffraction and measurements of unsteady photoconductivity timedecay under band-to band excitation were used to investigate the influence of defects in different diameter (40 – 300 mm) Si ingots on the oxygen precipitation due to two-stage annealing (750 оС + 1050 оС). It is shown that large size Cz-Si ingots have a relatively low concentration of electrically active micro-defects, containing small (0.06 – 0.1 μm) dislocation loops. During thermal treatments this leads to the formation of a low stressed oxide phase (SiO2) with an enhanced thermo-stability. The precipitates in small size ingots, however, contain distorted 4-fold rings of SiO4 tetrahedra.

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Gettering and Defect Engineering in Semiconductor Technology XII

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

405-412

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.405

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Online since:

October 2007

Authors:

V.G. Litovchenko, I.P. Lisovskyy, Cor Claeys, V.P. Kladko, S.O. Zlobin, M.V. Muravska, O.O. Efremov, M.V. Slobodjan

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Defect, Oxygen, Precipitation, Silicon

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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