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HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Evaluation of Surface Passivation Layers for Bulk...

Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors

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Abstract:

In order to identify an appropriate low-temperature surface passivation that could be used for bulk lifetime estimation of high resistivity (HR) (> 1 k·cm) silicon for radiation detectors, different passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HR magnetic CZ and HR float zone (FZ) substrates. Minority carrier lifetime measurements were performed by means of a μW-PCD set-up. The results show that SiNx PECVD layers deposited at low temperatures (≤ 250°C) may be used to evaluate the impact of different processing steps and treatments on the substrate characteristics for radiation detectors. First results are obtained about a preliminary thermal treatment experiment to evaluate the thermal stability of the passivating layers, as well as the potential impact of the generation of thermal donors on minority carrier lifetime.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

431-436

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.431

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Online since:

October 2007

Authors:

J.M. Rafí, L. Cardona-Safont, M. Zabala, C. Boulord, F. Campabadal, G. Pellegrini, M. Lozano, Eddy Simoen, Cor Claeys

Keywords:

High Resistivity Silicon, Minority Carrier Lifetime, Passivation, Thermal Donor

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Fischer and W. Pschunder: Proc. 10 th Photovoltaics Specialists Conference (1974), p.404.

[2] G. Lindström, M. Ahmed, S. Albergo, et al.: Nucl. Instrum. & Meth. A Vol. 466 (2001), p.308.

[3] F. Shimura: Oxygen in Silicon (Academic Press, San Diego, 1994).

[4] J.M. Rafí, E. Simoen, C. Claeys, et al.: J. Electrochem. Soc. Vol. 152 (2005), p. G16.

[5] J. Härkönen, E. Tuominen, K. Lassila-Perini, et al. : Nucl. Instrum. & Meth. A Vol. 485 (2002), p.159.

[6] M. Lozano, M. Ullán, C. Martínez, L. Fonseca, et al.: J. Electrochem. Soc. Vol. 151 (2004), p. G652.

[7] G. Pellegrini, P. Roy, R. Bates, et al.: Nucl. Instrum. & Meth. A Vol. 487 (2002), p.19.

[8] G. Pellegrini, M. Lozano, F. Campabadal, et al.: Nucl. Instrum. & Meth. A Vol. 563 (2006), p.70.

[9] M.J. Kerr and A. Cuevas: Semicond. Sci. & Tech. Vol. 17 (2002), p.35.

[10] Z. Chen, S. K. Pang, K. Yasutake and A. Rohatgi: J. Appl. Phys. Vol. 74 (1993) p.2856.

[11] A.G. Aberlee and R. Hezel: Progr. in Photovoltaics: Res. & Appl. Vol. 5 (1997), p.29.

[12] M. Taguchi, K. Kawamoto, S. Tsuge, T. Baba, H. Sakata, M. Morizane, K. Uchihashi, N. Nakamura, S. Kiyama, O. Oota: Progr. in Photovoltaics: Res. & Appl. Vol. 8 (2000), p.503.

DOI: 10.1002/1099-159x(200009/10)8:5<503::aid-pip347>3.0.co;2-g

[13] S. De Wolf, G. Agostinelli, H.F.W. Dekkers and J. Szlufcik: Acta Phys. Slov. Vol. 53 (2003), p.135.

[14] I. Martín, M. Vetter, A. Orpella, et al.: Appl. Phys. Lett. Vol. 79 (2001), p.2199.

[15] E. Yablonovitch, D.L. Allara, C.C. Chang, et al.: Phys. Rev. Lett. Vol. 57 (1986), p.249.

[16] R. Lago-Aurrekoetxea, I. Tobías, C. del Cañizo, et al.: J. Electrochem. Soc. Vol. 148 (2001), p. G200.

[17] A. Ulyashin, E. Simoen, L. Carnel, S. De Wolf, H. Dekkers, J.M. Rafí, G. Beaucarne J. Poortmans and C. Claeys: Proc. 8 th Int. Symp. High Purity Silicon. The Electrochem. Soc., PV 2004-05 (2004), p.334.

[18] E. Simoen, C. Claeys, R. Job, et al.: Appl. Phys. Lett. Vol. 81 (2002), p.1842.

[19] Y. L. Huang, E. Simoen, C. Claeys, et al.: Appl. Phys. Lett. Vol. 89 (2006), p.031911.

[20] J.M. Rafí, L. Cardona-Safont, M. Zabala, F. Campabadal, G. Pellegrini and M. Lozano: To be published in Proc. Spanish Conference on Electron Devices CDE (2007).

DOI: 10.1109/sced.2007.383985

[21] Semilab WT-1000 Wafer Tester User's Manual, Semilab Rt., Budapest, Hungary, (2005).

[22] D.K. Schroder: Semiconductor Material and Device Characterization (Wiley, New York (2006).

[23] J. Schmidt: IEEE Trans. Electron Dev. Vol. 46 (1999), p. (2018).

[24] G. Pellegrini, J.M. Rafí, M. Ullán, et al.: Nucl. Instrum. & Meth. A Vol. 548 (2005), p.355.

[25] M. Bruzzi, D. Menichelli, M. Scaringella, et al.: J. Appl. Phys. Vol. 99 (2006) p.093706.

[26] C. Leguijt, P. Lölgen, J.A. Eikelboom, et al.: Solar Energy Mat. & Solar Cells Vol. 34 (1994), p.177.

[27] A. Bentzen, A. Ulyashin, A. Suphellen, et al.: Proc. PVSEC (2005), p.316.

[28] A.G. Ulyashin, A. Bentzen, S. Diplas, et al.: Proc. WCPEC-4 (2006), p.1354.

[29] A. Usami, Y. Fujii and K. Morioka: J. Phys. D: Appl. Phys. Vol. 10 (1977) p.899.