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HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133HREM Study of the Strain Field Induced by the...

HREM Study of the Strain Field Induced by the Entrance of a Matrix Dislocation within the Coherent Twin GB in Ge.

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Abstract:

Strains around a constricted matrix dislocation in a coherent twin grain boundary in germanium is measured by a combination of high-resolution electron microscopy and geometric phase analysis. Whilst strains in the grains on either side of the twin boundary agree closely with the isolated dislocation case, significant additional strains are localized at the boundary plane. By comparing the stresses and strains across the boundary plane, values for the elastic modulus of the twin boundary are determined. They are found to exhibit a drastic decrease as compared to the bulk and this is interpreted in terms of the non-equilibrium configuration of the boundary.

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Gettering and Defect Engineering in Semiconductor Technology XII

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

437-442

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.437

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Online since:

October 2007

Authors:

Jany Thibault-Pénisson, Martin J. Hÿtch

Keywords:

Dislocation, Elastic Constant, Grain Boundary, High Resolution Electron Microscopy (HREM), Strain Field

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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