Semi-Insulating Silicon for Microwave Devices

Abstract:

The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ~180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the position of the two gold energy levels introduced into the band gap. Measurements of the temperature dependence of the resistivity of the semi-insulating material show that a resistivity ~5kΩcm can be achieved at 100°C. Thus the substrates are suitable for microwave devices working at normal operating temperatures and should allow Si to be used for much higher frequency microwave applications than currently possible.

• Periodical: Solid State Phenomena (Volumes 156-158)
• Pages: 101-106
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.156-158.101
• Online since: October 2009
• Authors: Douglas M. Jordan, Kanad Mallik, Robert J. Falster, Peter R. Wilshaw
• Keywords: Gold, High Resistivity, Micro-Wave, Semi-Insulating, Silicon

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