Semi-Insulating Silicon for Microwave Devices

Abstract:

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The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ~180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the position of the two gold energy levels introduced into the band gap. Measurements of the temperature dependence of the resistivity of the semi-insulating material show that a resistivity ~5kΩcm can be achieved at 100°C. Thus the substrates are suitable for microwave devices working at normal operating temperatures and should allow Si to be used for much higher frequency microwave applications than currently possible.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

101-106

DOI:

10.4028/www.scientific.net/SSP.156-158.101

Citation:

D. M. Jordan et al., "Semi-Insulating Silicon for Microwave Devices", Solid State Phenomena, Vols. 156-158, pp. 101-106, 2010

Online since:

October 2009

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Price:

$35.00

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