Si Wafer Bonding: Structural Features of the Interface

V.I. Vdovin; N.D. Zakharov; Eckhard Pippel; P. Werner; M.G. Milvidskii; M. Ries; M. Seacrist; Robert J. Falster

doi:10.4028/www.scientific.net/SSP.156-158.85

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HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Si Wafer Bonding: Structural Features of the...

Si Wafer Bonding: Structural Features of the Interface

Abstract:

Kinetics of oxide layer dissolution and atomic structure of Si-Si interface in Si wafer bonded structures have been investigated by transmission electron microscopy. Samples of Si(001)/SiO2/Si(001) and Si(110)/SiO2/Si(001) structures were fabricated by direct hydrophilic wafer bonding of 200 mm wafers followed by high temperature annealing. It is found that the decomposition rate of oxide layer and formation of Si-Si bonded interface depends very much on lattice mismatch and twist angle.

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Periodical:

Solid State Phenomena (Volumes 156-158)

Pages:

85-90

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.156-158.85

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Online since:

October 2009

Authors:

V.I. Vdovin, N.D. Zakharov, Eckhard Pippel, P. Werner, M.G. Milvidskii, M. Ries, M. Seacrist, Robert J. Falster

Keywords:

Dislocation, Oxide Layer Dissolution, Si Wafer Bonding

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References

[1] T. Akatsu, R. Scholz, U. Gsele: J. Mat. Sci. Vol. 39 (2004), p.3031.

Google Scholar

[2] E. Schroer, S. Hopfe, P. Werner, U. Gösele: Appl. Phys. Lett. Vol. 70 (1997), p.327.

Google Scholar

[3] M. Kittler, X. Yu, O.F. Vyvenko, M. Birkholz, W. Seifert, M. Reiche, T. Wilhelm, T. Arguirov, A. Wolff, W. Fritzsche and M. Seibt: Mat. Sci. Eng. C Vol. 26 (2006), p.902.

DOI: 10.1016/j.msec.2005.09.047

Google Scholar

[4] M.C. Wagener, R.H. Zhang, W. Zhao, M. Seacrist, M. Ries, and G.A. Rozgonyi: Solid State Phenom., Vol. 131-133 (2008), p.321.

DOI: 10.4028/www.scientific.net/ssp.131-133.321

Google Scholar

[5] M. Reiche, S. Hopfe, U. Gsele, Q.Y. Tong: Appl. Phys. Vol. A 61 (1995), p.101.

Google Scholar

[6] V. Vdovin, N. Zakharov, E. Pippel, P. Werner, M. Milvidskii, M. Ries, M. Seacrist, and R. Falster: Physica Status Solidi (c), in press.

DOI: 10.1002/pssc.200881431

Google Scholar

[7] K.K. Bourdelle, O. Rayssac, A. Lambert et all: ECS Transections, Vol. 3 (2006), p.409.

Google Scholar

[8] V.I. Vdovin, M.G. Milvidskii, M.M. Rzaev, and F. Schaffler: Solid State Phenom., Vol. 108- 109 (2005), p.483.

Google Scholar