Novel Trends in SOI Technology for CMOS Applications

Oleg Kononchuk; Didier Landru; Christelle Veytizou

doi:10.4028/www.scientific.net/SSP.156-158.69

Paper Titles

Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon
p.41

Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline Silicon
p.49

An Investigation into Fracture of Multi-Crystalline Silicon
p.55

Strained Silicon Devices
p.61

Novel Trends in SOI Technology for CMOS Applications
p.69

Advanced Si-based Semiconductors for Energy and Photonic Applications
p.77

Si Wafer Bonding: Structural Features of the Interface
p.85

Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing
p.91

Growth of Heavily Phosphorus-Doped (111) Silicon Crystals
p.95

HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Novel Trends in SOI Technology for CMOS...

Novel Trends in SOI Technology for CMOS Applications

Abstract:

High temperature annealing of SOI wafers in non-oxidized ambient leads to internal Buried Oxide (BOX) dissolution. The underlying mechanisms and kinetics of this effect are discussed. High quality SOI wafers with very thin BOX down to 2nm are demonstrated utilizing optimized annealing conditions. Hybrid SOI/bulk wafers are obtained by the new process applying silicon nitride mask on the wafer surface. Stability of SOI and Si3N4/SOI systems at high temperatures is discussed and optimized process window is determined.

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Periodical:

Solid State Phenomena (Volumes 156-158)

Pages:

69-76

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.156-158.69

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Online since:

October 2009

Authors:

Oleg Kononchuk, Didier Landru, Christelle Veytizou

Keywords:

BOX Dissolution, Dislocation Network, Smart-Cut, SOI

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