Strained Silicon Devices

Abstract:

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Strained silicon channels are one of the most important Technology Boosters for further Si CMOS developments. The mobility enhancement obtained by applying appropriate strain provides higher carrier velocity in MOS channels, resulting in higher current drive under a fixed supply voltage and gate oxide thickness. The physical mechanism of mobility enhancement, methods of strain generation and their application for advanced VLSI devices is reviewed.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

61-68

DOI:

10.4028/www.scientific.net/SSP.156-158.61

Citation:

M. Reiche et al., "Strained Silicon Devices", Solid State Phenomena, Vols. 156-158, pp. 61-68, 2010

Online since:

October 2009

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Price:

$35.00

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