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HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Strained Silicon Devices

Strained Silicon Devices

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Abstract:

Strained silicon channels are one of the most important Technology Boosters for further Si CMOS developments. The mobility enhancement obtained by applying appropriate strain provides higher carrier velocity in MOS channels, resulting in higher current drive under a fixed supply voltage and gate oxide thickness. The physical mechanism of mobility enhancement, methods of strain generation and their application for advanced VLSI devices is reviewed.

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Gettering and Defect Engineering in Semiconductor Technology XIII

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Solid State Phenomena (Volumes 156-158)

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61-68

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https://doi.org/10.4028/www.scientific.net/SSP.156-158.61

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Online since:

October 2009

Authors:

Manfred Reiche, O. Moutanabbir, Jan Hoentschel, U.M. Gösele, Stefan Flachowsky, Manfred Horstmann

Keywords:

Global Strain, Mobility Enhancement, Process-Induced Strain, sSOI, Strained Silicon

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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