Paper Title:
Strained Silicon Devices
  Abstract

Strained silicon channels are one of the most important Technology Boosters for further Si CMOS developments. The mobility enhancement obtained by applying appropriate strain provides higher carrier velocity in MOS channels, resulting in higher current drive under a fixed supply voltage and gate oxide thickness. The physical mechanism of mobility enhancement, methods of strain generation and their application for advanced VLSI devices is reviewed.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
61-68
DOI
10.4028/www.scientific.net/SSP.156-158.61
Citation
M. Reiche, O. Moutanabbir, J. Hoentschel, U.M. Gösele, S. Flachowsky, M. Horstmann, "Strained Silicon Devices", Solid State Phenomena, Vols. 156-158, pp. 61-68, 2010
Online since
October 2009
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