Anisotropic Strain – Anisotropic Heating Engineering for Silicon Nanocrystals in SiO2

Abstract:

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In the present paper we discuss effects due to high-energy ion bombardment of SiO2 layers with embedded Si nanocrystals (NCs), such as the formation of new Si NCs in such layers, amorphization of previously existing NCs, modification of NC size distribution, and modification of optical and electrical properties of NCs. These effects are identified as resulting from anisotropic strain - anisotropic heating in NCs-SiO2 layers under ion irradiation.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

523-528

DOI:

10.4028/www.scientific.net/SSP.156-158.523

Citation:

I.V. Antonova et al., "Anisotropic Strain – Anisotropic Heating Engineering for Silicon Nanocrystals in SiO2", Solid State Phenomena, Vols. 156-158, pp. 523-528, 2010

Online since:

October 2009

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Price:

$35.00

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