Anisotropic Strain – Anisotropic Heating Engineering for Silicon Nanocrystals in SiO2

I.V. Antonova; D.V. Marin; Vladimir A. Volodin; V.A. Skuratov; J. Jedrzejewski; I. Balberg

doi:10.4028/www.scientific.net/SSP.156-158.523

Paper Titles

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
p.493

Current Status of Graphene Transistors
p.499

Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors
p.511

Scaling in Quantum Transport in Silicon Nano-Transistors
p.517

Anisotropic Strain – Anisotropic Heating Engineering for Silicon Nanocrystals in SiO₂
p.523

Silicon Cluster Aggregation in Silica Layers
p.529

Feedback Effect on the Self-Organized Nanostructures Formation on Silicon upon Femtosecond Laser Ablation
p.535

Confinement Levels in Passivated SiGe/Si Quantum Well Structures
p.541

Silicon Periodic Structures and their Liquid Crystal Composites
p.547

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Anisotropic Strain – Anisotropic Heating Engineering for Silicon Nanocrystals in SiO₂

Abstract:

In the present paper we discuss effects due to high-energy ion bombardment of SiO2 layers with embedded Si nanocrystals (NCs), such as the formation of new Si NCs in such layers, amorphization of previously existing NCs, modification of NC size distribution, and modification of optical and electrical properties of NCs. These effects are identified as resulting from anisotropic strain - anisotropic heating in NCs-SiO2 layers under ion irradiation.