Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors

Abstract:

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This study presents ionized impurity impacts on silicon nanowire MOS transistors. We calculate the current characteristics with a self-consistent three-dimensional (3D) Green’s function approach and show the effects of both acceptor and donor impurities on the physical electron properties. In particular, we emphasize that the presence of a donor induces different transport phenomena according to the applied gate bias. Our results show that the influence of a single impurity strongly depends on its position and induces high transistor performance variability with current modifications from 50% to two orders of magnitude.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

511-516

DOI:

10.4028/www.scientific.net/SSP.156-158.511

Citation:

M. Bescond et al., "Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors", Solid State Phenomena, Vols. 156-158, pp. 511-516, 2010

Online since:

October 2009

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Price:

$35.00

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