Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors
This study presents ionized impurity impacts on silicon nanowire MOS transistors. We calculate the current characteristics with a self-consistent three-dimensional (3D) Green’s function approach and show the effects of both acceptor and donor impurities on the physical electron properties. In particular, we emphasize that the presence of a donor induces different transport phenomena according to the applied gate bias. Our results show that the influence of a single impurity strongly depends on its position and induces high transistor performance variability with current modifications from 50% to two orders of magnitude.
M. Kittler and H. Richter
M. Bescond et al., "Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors", Solid State Phenomena, Vols. 156-158, pp. 511-516, 2010