Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors

Marc Bescond; Michel Lannoo; L. Raymond; F. Michelini

doi:10.4028/www.scientific.net/SSP.156-158.511

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HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Theoretical Study of Ionized Impurities in Silicon...

Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors

Abstract:

This study presents ionized impurity impacts on silicon nanowire MOS transistors. We calculate the current characteristics with a self-consistent three-dimensional (3D) Green’s function approach and show the effects of both acceptor and donor impurities on the physical electron properties. In particular, we emphasize that the presence of a donor induces different transport phenomena according to the applied gate bias. Our results show that the influence of a single impurity strongly depends on its position and induces high transistor performance variability with current modifications from 50% to two orders of magnitude.

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Periodical:

Solid State Phenomena (Volumes 156-158)

Pages:

511-516

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.156-158.511

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Online since:

October 2009

Authors:

Marc Bescond, Michel Lannoo, L. Raymond, F. Michelini

Keywords:

Green's Function, Impurity, Modeling, Nanowire, Quantum Transport, Transistor

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References

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