Cathodoluminescence of SiO₂/Si System

Abstract:

In this paper the new method for determination of luminescent centers concentration are discussed. While the possibility of electron traps determination and definition of its activation energy are suggested. The cathodoluminescent (CL) method was used. The determination of luminescent centers concentration in silicon oxide is based on the measurements of dependences of CL intensity on electron beam current. The presence and energy of activation of electron traps were studied by measurement of rise time and decay of luminescent band during the stationary irradiation of silica by electron beam.

• Periodical: Solid State Phenomena (Volumes 156-158)
• Pages: 487-492
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.156-158.487
• Online since: October 2009
• Authors: M.V. Zamoryanskaya
• Keywords: Cathodoluminescence, Intrinsic Defect, Silicon, Silicon Oxide (SiO)

References

[1] C. Delerue, G. Allan and M. Lannoo J. Luminescence, V. 80, (1999), p.65.

[2] M.V. Zamoryanskaya, V.I. Sokolov Solid State Phenomena V. 108-109 (2005), p.649.

[3] L. Skuja Non-Cryst. Solid V. 167, (1994), p.229.

[4] M.V. Zamoryanskaya, S.G. Konnikov, A.N. Zamoryanskii Instruments and Experimental Techniques, V. 47 (2004) p.477.

[5] Fan M., der Weg W. F, Fan Tol M.V. J. Appl. Phys. Lett. V. 38, (1981), p.705.

[6] H. -J. Fitting, A. von Czarnowski, A.N. Trukhin, M. Goldberg and T. Barfels Solod State Phenomena, V. 63-64 (1998), p.333.

DOI: 10.4028/www.scientific.net/ssp.63-64.333

[7] M.V. Zamoryanskaya, A. Yu. Valters Optics and Spectroscopy, V. 76, (1994), p.546.