Determination of Selective Concentration Profile and Depth Resolved Partial Atomic Distributions for Multilayer Nanoheterostructures

Yu.A. Babanov; Yu.A. Salamatov; E. Kh. Mukhamedzhanov

doi:10.4028/www.scientific.net/SSP.168-169.307

Paper Titles

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Self-Oscillations of Current Density upon Nonequilibrium Electronic Phase Transition in Nearly Magnetic FeSi
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Complementary Analysis of Epitaxial Fe (001) Films with Improved Electronic Transport and Magnetic Properties
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Giant Drop of Magnetic Hysteresis with Decreasing Thickness of Cr-Buffer Layer of CoFe/Cu Superlattices
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Determination of Selective Concentration Profile and Depth Resolved Partial Atomic Distributions for Multilayer Nanoheterostructures
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Making Ferromagnetic Heterostructures Si/Zn_(1-X)Mn_XSiAs₂ and Ge/Zn_(1-X)Mn_XGeAs₂
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Features of Optical Properties and the Electronic Structure of Nanostructured Oxides of 3d-Metals
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Two-Threshold Stability Loss in Magnetic System with Nonmagnetic Interlayer
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Magnetic States of Nanodot Arrays. Physical and Numerical Experiments
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Determination of Selective Concentration Profile and Depth Resolved Partial Atomic Distributions for Multilayer Nanoheterostructures

Abstract:

A new method for studying multilayer structure using angle resolved XAFS measurements is proposed. The integral equation describing the relation between the fluorescence intensity for selective spectrum, the incident beam energy, the incident angle and a selective concentration profile, depth-dependent EXAFS has been derived. This integral Fredholm equation of the first kind belongs to the class of ill-posed problems and for the solution it needs special methods. We use the regularization Tikhonov method. The effectiveness of the proposed method was tested using the numerical simulations for trilayer system Cr-Fe-Cr. Some first experimental results for the thin films of pure Cr are also presented.