Concentration Dependence of Localized Magnetic Moments of Hybridized Electron States at the Impurities of Transition Elements in Semiconductors

Abstract:

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Based on a simple model, theoretical description of localized spins of hybridized electron states of donor impurities in the conduction band of asemiconductor has been developed. Equations are formulated and solved numerically that describe the concentration dependence of localized spins. It is shown that they can exist and reach maximal values in a certain interval of impurity concentration in the vicinity of its value, at which the Fermi energy of the electronic system coincides with the energy level of the donor impurity. The conclusions obtained are compared with the results of Anderson’s theory.

Info:

Periodical:

Solid State Phenomena (Volumes 168-169)

Main Theme:

Edited by:

V. Ustinov

Pages:

489-492

DOI:

10.4028/www.scientific.net/SSP.168-169.489

Citation:

V.I. Okulov et al., "Concentration Dependence of Localized Magnetic Moments of Hybridized Electron States at the Impurities of Transition Elements in Semiconductors", Solid State Phenomena, Vols. 168-169, pp. 489-492, 2011

Online since:

December 2010

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Price:

$35.00

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