Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors

Abstract:

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Circularly polarized electroluminescence from light-emitting diodes based on InGaAs/GaAs heterostructures with adjacent ferromagnetic delta-doped layer has been investigated. It was found that delta-layer placed near (at 2-10 nm) the quantum well (QW) causes circular polarization of its electroluminescence due to an s,p-d exchange interaction between holes in the quantum well and Mn ions in the delta-layer. The dependence of circular polarization degree on main technology parameters is discussed.

Info:

Periodical:

Solid State Phenomena (Volumes 168-169)

Main Theme:

Edited by:

V. Ustinov

Pages:

55-58

DOI:

10.4028/www.scientific.net/SSP.168-169.55

Citation:

Y.A. Danilov et al., "Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors", Solid State Phenomena, Vols. 168-169, pp. 55-58, 2011

Online since:

December 2010

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Price:

$35.00

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