Paper Titles
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Quantum Amplifier with Spin-Polarized Electrons Injection
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Spin Relaxation in GaAs Doped with Magnetic (Mn) Atoms
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Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors
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Nonlinear Spin Dynamics in Magnetic Mesostructures Induced by Spin Polarized Autoemission
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Collective Magnetic Moment Relaxation in an Assembly of Ferromagnetic Nanoparticles
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Ferromagnetic and Spin-Wave Resonance in Exchange-Coupled NiFe/Ag/NiFe Three-Layer Structures
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Spin-Wave Resonance in Multilayer Films
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Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors

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Abstract:

Circularly polarized electroluminescence from light-emitting diodes based on InGaAs/GaAs heterostructures with adjacent ferromagnetic delta-doped layer has been investigated. It was found that delta-layer placed near (at 2-10 nm) the quantum well (QW) causes circular polarization of its electroluminescence due to an s,p-d exchange interaction between holes in the quantum well and Mn ions in the delta-layer. The dependence of circular polarization degree on main technology parameters is discussed.

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Periodical:

Solid State Phenomena (Volumes 168-169)

Pages:

55-58

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.168-169.55

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Cite this paper

Online since:

December 2010

Authors:

Y.A. Danilov, Y.N. Drozdov, M.V. Dorokhin, V.D. Kulakovskii, M.M. Prokof’eva, S.V. Zaitsev, B.N. Zvonkov

Keywords:

Circular Polarization Degree, Delta-Doped Layer, Electroluminescence, Exchange Interaction, Schottky Diode

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] D.K. Young, J.A. Gupta, E. Johnston-Halperin, R. Epstein, Y. Kato, D.D. Awschalom: Semicond. Sci. Tech. Vol. 17 (2002), p.275.

Google Scholar

[2] R. Fiederlihg, P. Grabs, W. Ossau, G. Schmidt, L.W. Molenkamp: Appl. Phys. Lett. Vol. 82 (2003), p.2160.

Google Scholar

[3] R.C. Myers, A.C. Gossard, D.D. Awschalom: Phys. Rev B Vol. 69 (2004), p.161305.

Google Scholar

[4] A.M. Nazmul, S. Sugahara, M. Tanaka: Phys. Rev. B. Vol. 67 (2003), p.241308.

Google Scholar

[5] M.V. Dorokhin, Yu.A. Danilov, P.B. Demina, V.D. Kulakovskii, O.V. Vikhrova, S.V. Zaitsev, B.N. Zvonkov: J. Phys. D.: Appl. Phys. Vol. 41 (2008), p.245110.

DOI: 10.1088/0022-3727/41/24/245110

Google Scholar

[6] S.V. Zaitsev, M.V. Dorokhin, A.S. Brichkin, O.V. Vikhrova, Yu.A. Danilov, B.N. Zvonkov, and V.D. Kulakovskii: JETP Letters Vol. 90 (2009), p.658.

DOI: 10.1134/s0021364009220056

Google Scholar

[7] R. Kotlyar, T.L. Reinecke, M. Bayer, A. Forchel: Phys. Rev. B Vol. 65 (2001), p.085310.

Google Scholar