Heteroepitaxy Crystallography in Low Dimensional Nanostructures

Abstract:

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Low dimensional nanostructures, e.g. nanowires, self-assembled through heteroepitaxy, present a variety of crystallographic features that do not always follow conventional V-W or S-K growth mode. Applying Δg parallelism rules and edge-to-edge matching (E2EM) model in β-DySi2/Si and CoSi2/Si systems provides a better understanding of the natural preference of the interface orientation and the orientation relationship (OR) during heteroepitaxial growth. This may help improving the quality of nanowires through optimizing the substrate orientation.

Info:

Periodical:

Solid State Phenomena (Volumes 172-174)

Edited by:

Yves Bréchet, Emmanuel Clouet, Alexis Deschamps, Alphonse Finel and Frédéric Soisson

Pages:

1307-1312

DOI:

10.4028/www.scientific.net/SSP.172-174.1307

Citation:

D. Qiu et al., "Heteroepitaxy Crystallography in Low Dimensional Nanostructures", Solid State Phenomena, Vols. 172-174, pp. 1307-1312, 2011

Online since:

June 2011

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Price:

$35.00

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