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HomeSolid State PhenomenaSolid State Phenomena Vols. 172-174Heteroepitaxy Crystallography in Low Dimensional...

Heteroepitaxy Crystallography in Low Dimensional Nanostructures

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Abstract:

Low dimensional nanostructures, e.g. nanowires, self-assembled through heteroepitaxy, present a variety of crystallographic features that do not always follow conventional V-W or S-K growth mode. Applying Δg parallelism rules and edge-to-edge matching (E2EM) model in β-DySi₂/Si and CoSi₂/Si systems provides a better understanding of the natural preference of the interface orientation and the orientation relationship (OR) during heteroepitaxial growth. This may help improving the quality of nanowires through optimizing the substrate orientation.

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Periodical:

Solid State Phenomena (Volumes 172-174)

Pages:

1307-1312

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.172-174.1307

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Online since:

June 2011

Authors:

Dong Qiu, Ming Xing Zhang, Patrick Kelly

Keywords:

Crystallography, Heteroepitaxy, Nanowire, Orientation Relationship, Substrate Design

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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