Raman Analysis of the Silicon Wafer Scratched by Single Point Diamond

Abstract:

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This paper presents a Raman analysis of the monocrystalline silicon wafer scratched by single point diamond. Si-III and Si-XII phases are found to be existence in the scratched silicon surface, which is the result of the phase transformation. A mathematical model was developed to calculating the molar concentration of phase of the silicon. Based on the mathemathical model, the relationship between the molar concentrations of the Si-I phase and the applied load was analysied.

Info:

Periodical:

Solid State Phenomena (Volume 175)

Edited by:

Xipeng Xu

Pages:

82-86

DOI:

10.4028/www.scientific.net/SSP.175.82

Citation:

Z. Chen et al., "Raman Analysis of the Silicon Wafer Scratched by Single Point Diamond", Solid State Phenomena, Vol. 175, pp. 82-86, 2011

Online since:

June 2011

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$35.00

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