Raman Analysis of the Silicon Wafer Scratched by Single Point Diamond

Zhuo Chen; Xin Wei; Xiao Zhu Xie; Qing Lei Ren

doi:10.4028/www.scientific.net/SSP.175.82

Paper Titles

Energy and Material Removal Mechanisms for the Grinding of Cemented Carbide with Brazed Diamond Wheels
p.58

Analysis of Energy Consumption Efficiency in Diamond Circular Sawing
p.67

Analysis of Grit Cut Depth in Fixed-Abrasive Diamond Wire Saw Slicing Single Crystal Silicon
p.72

Research on the Mechanical Properties of CaF₂ Crystal for Ultra-Precision Machining
p.77

Raman Analysis of the Silicon Wafer Scratched by Single Point Diamond
p.82

Material Removal Distribution of Chemical Mechanical Polishing by the Bionic Polishing Pad with Phyllotactic Pattern
p.87

The Effects of the Geometric Parameters of Segmented Sawblades on the Fluctuated Temperatures in Sawing
p.93

The Study of Vibration Effects on Precision Grinding Surface Quality
p.97

Analysis of Effecting Factors on Surface Finish of Fused Silica Glass Grinding with Inclined Ball-Headed Diamond Wheel
p.102

HomeSolid State PhenomenaSolid State Phenomena Vol. 175Raman Analysis of the Silicon Wafer Scratched by...

Raman Analysis of the Silicon Wafer Scratched by Single Point Diamond

Abstract:

This paper presents a Raman analysis of the monocrystalline silicon wafer scratched by single point diamond. Si-III and Si-XII phases are found to be existence in the scratched silicon surface, which is the result of the phase transformation. A mathematical model was developed to calculating the molar concentration of phase of the silicon. Based on the mathemathical model, the relationship between the molar concentrations of the Si-I phase and the applied load was analysied.

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Solid State Phenomena (Volume 175)

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82-86

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.175.82

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Online since:

June 2011

Authors:

Zhuo Chen, Xin Wei, Xiao Zhu Xie, Qing Lei Ren

Keywords:

Diamond, RAMAN, Silicon Wafer

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