Solid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure

Jadwiga Bak-Misiuk; Andrzej Misiuk; Adam Barcz; Przemyslaw Romanowski

doi:10.4028/www.scientific.net/SSP.178-179.416

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HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Solid Phase Epitaxial Re-Growth of Amorphous Layer...

Solid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure

Abstract:

Solid phase epitaxial regrowth (SPER) of amorphized layer in Czochralski grown silicon (Cz-Si) created by self-implantation (Si+ dose 2x1016 cm-2, energy 150 keV), subsequently annealed for 5 h at up to 1400 K under Ar pressure up to 1.4 GPa, was investigated by Secondary Ion Mass Spectrometry (SIMS) and X-ray methods. Annealing of Cz-Si:Si resulted in pressure-dependent SPER with a marked carbon and oxygen gettering within regrown region. Depth profiling of carbon and oxygen contaminants provides useful information concerning SPER in implanted single crystalline silicon.

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

416-420

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.416

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Online since:

August 2011

Authors:

Jadwiga Bak-Misiuk, Andrzej Misiuk, Adam Barcz, Przemyslaw Romanowski

Keywords:

Annealing, Cz-Si:Si, High Hydrostatic Pressure, Self-Implantation, SPER

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