Solid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure
Solid phase epitaxial regrowth (SPER) of amorphized layer in Czochralski grown silicon (Cz-Si) created by self-implantation (Si+ dose 2x1016 cm-2, energy 150 keV), subsequently annealed for 5 h at up to 1400 K under Ar pressure up to 1.4 GPa, was investigated by Secondary Ion Mass Spectrometry (SIMS) and X-ray methods. Annealing of Cz-Si:Si resulted in pressure-dependent SPER with a marked carbon and oxygen gettering within regrown region. Depth profiling of carbon and oxygen contaminants provides useful information concerning SPER in implanted single crystalline silicon.
W. Jantsch and F. Schäffler
J. Bak-Misiuk et al., "Solid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure", Solid State Phenomena, Vols. 178-179, pp. 416-420, 2011