Gettering and Defect Engineering in Semiconductor Technology XIV

Volumes 178-179

doi: 10.4028/www.scientific.net/SSP.178-179

Paper Title Page

Authors: Vladimir V. Voronkov, Robert Falster

Abstract: In dislocation-free silicon, intrinsic point defects – either vacancies or self-interstitials, depending on the growth conditions - are...

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Authors: V.G. Litovchenko, Boris Romanyuk, Viktor Melnik, Vasyl Klad’ko, Valentin Popov, Oleksandr Oberemok, Igor Khatsevich

Abstract: The peculiarities of a buried layer formation obtained by a co-implantation of O2 ions with the energy of 130 keV and carbon ions within the...

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Authors: Tzanimir Arguirov, Martin Kittler, Michael Oehme, Nikolay V. Abrosimov, Erich Kasper, Jörg Schulze

Abstract: We present a novel Ge on Si based LED with unstrained i-Ge active region. The device operates at room temperature and emits photons with...

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Authors: Valentin V. Emtsev, Gagik A. Oganesyan, Nikolay V. Abrosimov, Boris A. Andreev

Abstract: Si1-xGex alloys with small atomic fraction of Ge, x≤ 0.05 are investigated. The Hall mobility of electrons in n-type...

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Authors: Andrzej Misiuk, Jadwiga Bak-Misiuk, Barbara Surma, Wojciech Wierzchowski, Krzysztof Wieteska, Charalampos A. Londos, Nikolai V. Abrosimov, Jacek Kucytowski

Abstract: Creation and transformation of defects in single crystalline (001) oriented Si-Ge with about 5.6 at. % Ge content, containing oxygen...

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Authors: Peter Zaumseil, Yuji Yamamoto, Joachim Bauer, Markus Andreas Schubert, Jana Matejova, Grzegorz Kozlowski, Thomas Schroeder, Bernd Tillack

Abstract: Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the...

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Authors: Reinhard Kögler, Xin Ou, Nadine Geyer, Pratyush Das Kanungo, Daniel Schwen, Peter Werner, Wolfgang Skorupa

Abstract: Vertical p-type Si nanowires (NWs) "in-situ" doped during growth or "ex-situ" by B ion implantation are investigated regarding their...

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Authors: Ralph Rothemund, Susanne Kreuzer, Thomas Fromherz, Wolfgang Jantsch

Abstract: We fabricated and characterized NIR-active Schottky-contact solar cells with PbS nanocrystals (NCs) as the active medium. The photovoltaic e...

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Authors: Arturo Hernandez-Hernandez, Victor Tapio Rangel-Kuoppa, Thomas Plach, Francisco De Moure-Flores, Jose G. Quiñones-Galvan, Karen E. Nieto Zepeda, Martin Zapata-Torres, Miguel Meléndez-Lira

Abstract: In this work we report the results of the synthesis, structural and optical characterization of SiO2/Ge/SiO2...

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