Time-Resolved Photocurrent Measurements on PbS Nanocrystal Schottky-Contact Photovoltaic Cells

Ralph Rothemund; Susanne Kreuzer; Thomas Fromherz; Wolfgang Jantsch

doi:10.4028/www.scientific.net/SSP.178-179.56

Paper Titles

Electron Mobility in Moderately Doped Si_1-xGe_x
p.31

Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals
p.35

Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon
p.43

Acceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance Microscopy
p.50

Time-Resolved Photocurrent Measurements on PbS Nanocrystal Schottky-Contact Photovoltaic Cells
p.56

Synthesis of Light Emitting Ge Nanocrystals by Reactive RF Sputtering
p.61

Electrical Study of Self-Assembled Ge Quantum Dots Embedded in P-Type Silicon. Temperature Dependent Capacitance Voltage and DLTS Study
p.67

C-V - and DLTS-Investigations of Pyramid-Shaped Ge Quantum Dots Embedded in N-Type Silicon
p.72

Silicon PV Wafers: Mechanical Strength and Correlations with Defects and Stress
p.79

HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Time-Resolved Photocurrent Measurements on PbS...

Time-Resolved Photocurrent Measurements on PbS Nanocrystal Schottky-Contact Photovoltaic Cells

Abstract:

We fabricated and characterized NIR-active Schottky-contact solar cells with PbS nanocrystals (NCs) as the active medium. The photovoltaic e ffect is due to carrier generation in the PbS NCs as proven by the comparison of the spectrally-resolved external quantum effciency of the devices and absorbance spectra of the PbS NCs. The operative regime is extended well beyond the Si bandgap into the infrared spectral region up to 1500 nm limited by our measurement setup. One sun I-V and time-resolved photocurrent measurements help to identify critical solar cell parameters for the further improvement of PbS NC Schottky-contact solar cells.