C-V - and DLTS-Investigations of Pyramid-Shaped Ge Quantum Dots Embedded in N-Type Silicon

Victor Tapio Rangel-Kuoppa; Alexander Tonkikh; Nikolay Zakharov; Peter Werner; Wolfgang Jantsch

doi:10.4028/www.scientific.net/SSP.178-179.72

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HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179C-V - and DLTS-Investigations of Pyramid-Shaped Ge...

C-V - and DLTS-Investigations of Pyramid-Shaped Ge Quantum Dots Embedded in N-Type Silicon

Abstract:

We investigate self-assembled pyramid-shaped Ge Quantum Dots (QDs) with lateral dimensions of 15 nm, and heights of 2.5-3 nm. These Ge QDs were grown by Molecular Beam Epitaxy (MBE) on n-type Si(100) substrates using the Sb-mediated growth mode. The resistivity of the substrates was about 5 Ωcm. The Si buffer layer below the QDs and the Si capping layer above them were doped up to 10¹⁸ cm^-3 by Sb. Cross-section transmission electron microscopy shows the QDs and the Sb delta-doped layers. Using standard photolithographic techniques, a 0.3 mm² Au Schottky contact was applied to the epilayer, while an Ohmic contact was formed on the back side of the substrate. Plotting C^-2 vs. V plot reveals the nominal doping of 10¹⁸ cm^-3. DLTS studies revealed two levels with fitted activation energies of 49 meV and 360-390 meV. They are related to the Sb doping and the Pb interface states, respectively. The simulation suggests a deep level with a volumetric concentration of 2.55×10¹⁵ cm^-3. Multiplying this value by the thickness of the depletion region obtained from the CV measurements, we find that the deep level capture about 5.8×10⁹ electrons per cm².

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

72-75

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.72

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Online since:

August 2011

Authors:

Victor Tapio Rangel-Kuoppa, Alexander Tonkikh, Nikolay Zakharov, Peter Werner, Wolfgang Jantsch

Keywords:

Activation Energy, CV, Deep Level, DLTS, Ge Quantum Dots, Ge Quantum Pyramids

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