We investigate self-assembled pyramid-shaped Ge Quantum Dots (QDs) with lateral dimensions of 15 nm, and heights of 2.5-3 nm. These Ge QDs were grown by Molecular Beam Epitaxy (MBE) on n-type Si(100) substrates using the Sb-mediated growth mode. The resistivity of the substrates was about 5 Ωcm. The Si buffer layer below the QDs and the Si capping layer above them were doped up to 1018 cm-3 by Sb. Cross-section transmission electron microscopy shows the QDs and the Sb delta-doped layers. Using standard photolithographic techniques, a 0.3 mm2 Au Schottky contact was applied to the epilayer, while an Ohmic contact was formed on the back side of the substrate. Plotting C-2 vs. V plot reveals the nominal doping of 1018 cm-3. DLTS studies revealed two levels with fitted activation energies of 49 meV and 360-390 meV. They are related to the Sb doping and the Pb interface states, respectively. The simulation suggests a deep level with a volumetric concentration of 2.55×1015 cm-3. Multiplying this value by the thickness of the depletion region obtained from the CV measurements, we find that the deep level capture about 5.8×109 electrons per cm2.