Electron Mobility in Moderately Doped Si1-xGex
Si1-xGex alloys with small atomic fraction of Ge, x≤ 0.05 are investigated. The Hall mobility of electrons in n-type materials was measured at cryogenic temperatures, T≤ 100 K. Taking into account the partial mobility due to charge carrier scattering by ionized centers and phonons it is possible to estimate the partial mobility associated with alloy scattering. It appears that this contribution to the electron mobility in n-Si1-xGex at low temperatures is important even at x≈0.01. The obtained results can be useful for understanding the nature of SiGe alloys and their transport properties.
W. Jantsch and F. Schäffler
V. V. Emtsev et al., "Electron Mobility in Moderately Doped Si1-xGex", Solid State Phenomena, Vols. 178-179, pp. 31-34, 2011