Electron Mobility in Moderately Doped Si1-xGex

Abstract:

Article Preview

Si1-xGex alloys with small atomic fraction of Ge, x≤ 0.05 are investigated. The Hall mobility of electrons in n-type materials was measured at cryogenic temperatures, T≤ 100 K. Taking into account the partial mobility due to charge carrier scattering by ionized centers and phonons it is possible to estimate the partial mobility associated with alloy scattering. It appears that this contribution to the electron mobility in n-Si1-xGex at low temperatures is important even at x≈0.01. The obtained results can be useful for understanding the nature of SiGe alloys and their transport properties.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

31-34

DOI:

10.4028/www.scientific.net/SSP.178-179.31

Citation:

V. V. Emtsev et al., "Electron Mobility in Moderately Doped Si1-xGex", Solid State Phenomena, Vols. 178-179, pp. 31-34, 2011

Online since:

August 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.