Electron Mobility in Moderately Doped Si1-xGex

Valentin V. Emtsev; Gagik A. Oganesyan; Nikolay V. Abrosimov; Boris A. Andreev

doi:10.4028/www.scientific.net/SSP.178-179.31

Paper Titles

Preface and Committees

Intrinsic Point Defects in Silicon Crystal Growth
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Stimulated Creation of the SOI Structures with Si Nano-Clustersw by Low–Dose SIMOX Technology
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Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si
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Electron Mobility in Moderately Doped Si_1-xGe_x
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Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals
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Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon
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Acceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance Microscopy
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Time-Resolved Photocurrent Measurements on PbS Nanocrystal Schottky-Contact Photovoltaic Cells
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HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Electron Mobility in Moderately Doped Si1-xGex

Electron Mobility in Moderately Doped Si_1-xGe_x

Abstract:

Si_1-xGe_x alloys with small atomic fraction of Ge, x≤ 0.05 are investigated. The Hall mobility of electrons in n-type materials was measured at cryogenic temperatures, T≤ 100 K. Taking into account the partial mobility due to charge carrier scattering by ionized centers and phonons it is possible to estimate the partial mobility associated with alloy scattering. It appears that this contribution to the electron mobility in n-Si_1-xGe_x at low temperatures is important even at x≈0.01. The obtained results can be useful for understanding the nature of SiGe alloys and their transport properties.

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Solid State Phenomena (Volumes 178-179)

Pages:

31-34

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.31

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Online since:

August 2011

Authors:

Valentin V. Emtsev, Gagik A. Oganesyan, Nikolay V. Abrosimov, Boris A. Andreev

Keywords:

Alloy Scattering, Electron Mobility, SiGe Alloys

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References

[1] C. B. Vining, A model of the high temperature transport properties of heavily doped n-type silicon-germanium alloys, J. Appl. Phys. 69 (1991) 331-338.

DOI: 10.1063/1.347717

Google Scholar

[2] I. Yonenaga, W. J. Li, T. Akashi, T. Ayuzawa, and T. Goto, Temperature dependence of electron and hole mobilities in heavily impurity doped n-type SiGe single crystals, J. Appl. Phys. 98 (2005) 063702 1-4.

DOI: 10.1063/1.2035890

Google Scholar

[3] S.A. Lynch, G. Matmon, S.G. Pavlov, K.L. Litvinenko, B. Redlich, A.F.G. van der Meer, N.V. Abrosimov, and H. -W. Hűbers, Inhomogeneous broading of phosphorus donor lines in the far-infrared spectra in single-crystalline SiGe, Phys. Rev. B 82 (2010).

DOI: 10.1103/physrevb.82.245206

Google Scholar

[4] S. Krishnamurthy and A. Sher, Generalized Brook's formula and the electron mobility in Six Ge1-x alloys, Appl. Phys. Lett. 47 (1985) 160-162.

Google Scholar

[5] S.R. Mehrotra, A. Paul, and G. Klimeck, Atomistic approach to alloy scattering in Si1-x Gex , Appl. Phys. Letts 98 (2011) 173503.

DOI: 10.1063/1.3583983

Google Scholar

[6] G. Busch and O. Vogt, Helv. Phys. Acta 33, 437 (1960).

Google Scholar

[7] J.S. Blakemore, Semiconductor Statistics, Pergamon Press, (1962).

Google Scholar