Paper Titles

Stimulated Creation of the SOI Structures with Si Nano-Clustersw by Low–Dose SIMOX Technology
p.17

Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si
p.25

Electron Mobility in Moderately Doped Si_1-xGe_x
p.31

Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals
p.35

Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon
p.43

Acceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance Microscopy
p.50

Time-Resolved Photocurrent Measurements on PbS Nanocrystal Schottky-Contact Photovoltaic Cells
p.56

Synthesis of Light Emitting Ge Nanocrystals by Reactive RF Sputtering
p.61

Electrical Study of Self-Assembled Ge Quantum Dots Embedded in P-Type Silicon. Temperature Dependent Capacitance Voltage and DLTS Study
p.67

HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Characterization of Structural Defects in...

Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

Article Preview

Abstract:

Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO₂ used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islands relaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XIV

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

43-49

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.43

Citation:

Cite this paper

Online since:

August 2011

Authors:

Peter Zaumseil, Yuji Yamamoto, Joachim Bauer, Markus Andreas Schubert, Jana Matejova, Grzegorz Kozlowski, Thomas Schroeder, Bernd Tillack

Keywords:

Ge, Heteroepitaxy, Nano-Structured Si, TEM, X-Ray Diffraction (XRD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2011 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] N.A. Bojarczuk, M. Copel, S. Guha, V. Narayanan, E.J. Preisler, F.M. Ross, and H. Shang, Appl. Phys. Lett. 83 (2003) 5443-5445.

DOI: 10.1063/1.1637716

[2] M. Oehme, J. Werner, E. Kasper, S. Klinger, and M. Berroth, Appl. Phys. Lett. 91 (2007) 051108-051110.

DOI: 10.1063/1.2757599

[3] P. Sheldon, B.G. Yacobi, K.M. Jones, and D.J. Dunlavy, J. Appl. Phys. 58 (1985) 4186-4193.

[4] C. Claeys, and E. Simoen, Germanium-based Technologies, Elsevier (2007).

[5] AMI & Soitec work on the development of GOI wafer, " in III-Vs Review 17 (2004) 6.

[6] M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leiz and A. Fitzgerald, Appl. Phys. Lett. 72 (1998) 1718-1720.

[7] J. M. Hartmann, J. -F. Damlencourt, Y. Bogumilowicz, P. Holiger, G. Rolland and T. Billon J. Cryst. Growth 274 (2005) 90-99.

[8] D. Choi, Y. Ge, J. S. Harris, J. Cagnon and S. Stemmer J. Cryst. Growth 310 (2008) 4273-4279.

[9] V. Terzieva, L. Souriau, M. Caymax, D. P. Brunco, A. Moussa, S. Van Elshocht, R. Loo, F. Clemente, A. Satta and M. Meuris, Thin Solid Films 517 (2008) 172-177.

DOI: 10.1016/j.tsf.2008.08.144

[10] Y. Yamamoto, P. Zaumseil, T. Arguirov, M. Kittler, and B. Tillack, Solid State Electronics 60 (2011) 2-6.

DOI: 10.1016/j.sse.2011.01.032

[11] A. Giussani, P. Zaumseil, P. Rodenbach, G. Weidner, M. A. Schubert, D. Geiger, H. Lichte, P. Storck, J. Wollschläger, and T. Schroeder, J. Appl. Phys. 106 (2009) 073502-073509.

DOI: 10.1063/1.3224947

[12] P. Zaumseil, A. Giussani, O. Seifarth, T. Arguirov, M. A. Schubert, T. Schroeder, Solid State Phenomena 156-158 (2010) 467-472.

DOI: 10.4028/www.scientific.net/ssp.156-158.467

[13] E.A. Fitzgerald, J. Vac. Sci. Technol. B 7 (1989) 782-788.

[14] H. -C. Luan, D.R. Lim, K.K. Lee, K.M. Chen, J.G. Sandland, K. Wada, and L. Kimmerling, Appl. Phys. Lett. 75 (1999) 2909-2911.

[15] J. -S. Park, J. Bai, M. Curtin, B. Adekore, M. Caroll, and A. Lochtefeld, Appl. Phys. Lett. 90 (2007) 052113-052115.

[16] J. Bai, J. -S. Park, Z. Cheng, M. Curtin, B. Adekore, M. Caroll, A. Lochtefeld, and M. Dudley, Appl. Phys. Lett. 90 (2007) 101902-101904.

DOI: 10.1063/1.2711276

[17] P. Zaumseil, T. Schroeder, Ji-Soo Park, J. G. Fiorenza, and A. Lochtefeld, J. Appl. Phys. 106 (2009) 093524-093530.

[18] D. Zubia and S. D. Hersee, J. Appl. Phys. 85 (1999) 6492-6496.

[19] D. Zubia, S. H. Zaidi, S. D. Hersee, and S. R. J. Brueck, J. Vac. Sci. Technol. B 18 (2000) 3514-3520.

[20] P. Zaumseil, Y. Yamamoto, A. Bauer, M. A. Schubert, and T. Schroeder, J. Appl. Phys. 109 (2011) 023511-023518.

[21] V. Holý, J. Stangl, T. Fromherz, R. T. Lechner, E. Wintersberger, G. Bauer, Ch. Dais, E. Müller, and D. Grützmacher, Phys. Rev. B 79 (2009) 035324-035333.

DOI: 10.1103/physrevb.79.035324

[22] H. Rücker, B. Heinemann, W. Winkler, R. Barth, J. Borngräber, J. Drews, G.G. Fischer, A. Fox, T. Grabolla, U. Haak, D. Knoll, F. Korndörfer, A. Mai, S. Marschmeyer, P. Schley, D. Schmidt, J. Schmidt, K. Schulz, B. Tillack, D. Wolansky, Y. Yamamoto, Proc. IEEE BCTM 2009, pp.166-169.

DOI: 10.1109/bipol.2009.5314251

[23] G. Renaud, P. Guénard, and A. Barbier, Phys. Rev. B 58 (1998) 7310-7318.