Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals

Andrzej Misiuk; Jadwiga Bak-Misiuk; Barbara Surma; Wojciech Wierzchowski; Krzysztof Wieteska; Charalampos A. Londos; Nikolai V. Abrosimov; Jacek Kucytowski

doi:10.4028/www.scientific.net/SSP.178-179.35

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HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Impact of Hydrostatic Pressure Applied at...

Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals

Abstract:

Creation and transformation of defects in single crystalline (001) oriented Si-Ge with about 5.6 at. % Ge content, containing oxygen interstitials, Oi’s, at 9x1017cm-3 level, were investigated, after processing for 5 h at up to 1400 K (HT) under Ar pressure to 1.1 GPa (HP), by X-ray, synchrotron, infrared and photoluminescence methods. To create nucleation centres for Oi’s precipitation, some samples were pre-annealed for 10 h at 1000 K under 105 Pa. HT-HP treatment at 1230/1400 K results in improved sample homogeneity and crystallographic perfection. HT-HP induced changes in Si-Ge are related mainly to HP-stimulated diffusivity of Ge.

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

35-40

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.35

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Online since:

August 2011

Authors:

Andrzej Misiuk, Jadwiga Bak-Misiuk, Barbara Surma, Wojciech Wierzchowski, Krzysztof Wieteska, Charalampos A. Londos, Nikolai V. Abrosimov, Jacek Kucytowski

Keywords:

Annealing, Homogeneity, Hydrostatic Pressure, Si-Ge, Structural Property

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References

[1] Xinhuan Niu, Weilian Zhang, Guogi Lu, Zhongwei Jiang, J. Cryst. Growth 267 (2004) 424.

Google Scholar

[2] I. Yonenaga, T. Taishi, Y. Ohno, Y. Tokumoto, J. Cryst. Growth 312 (2010) 1065.

Google Scholar

[3] A. Misiuk, N.V. Abrosimov, P. Romanowski, J. Bak-Misiuk, A. Wnuk, B. Surma, W. Wierzchowski, K. Wieteska, W. Graeff, M. Prujszczyk, Mater. Sci. Engineering B 154 (2008) 137.

DOI: 10.1016/j.mseb.2008.08.012

Google Scholar

[4] T.S. Perova, R.A. Moore, K. Lyutovich, M. Oehme, E. Kasper, Thin Solid Films 517 (2008) 265.

DOI: 10.1016/j.tsf.2008.08.060

Google Scholar

[5] A. Misiuk, C.A. Londos, J. Bak-Misiuk, Deren Yang, W. Jung, M. Prujszczyk, Nucl. Instrum. Meth. Phys. Res. B 253 (2006) 205.

Google Scholar

[6] P. Zaumseil, G.G. Fisher, Ch. Quick, A. Misiuk, Solid State Phen. 47-48 (1996) 517.

Google Scholar