Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals

Abstract:

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Creation and transformation of defects in single crystalline (001) oriented Si-Ge with about 5.6 at. % Ge content, containing oxygen interstitials, Oi’s, at 9x1017cm-3 level, were investigated, after processing for 5 h at up to 1400 K (HT) under Ar pressure to 1.1 GPa (HP), by X-ray, synchrotron, infrared and photoluminescence methods. To create nucleation centres for Oi’s precipitation, some samples were pre-annealed for 10 h at 1000 K under 105 Pa. HT-HP treatment at 1230/1400 K results in improved sample homogeneity and crystallographic perfection. HT-HP induced changes in Si-Ge are related mainly to HP-stimulated diffusivity of Ge.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

35-40

DOI:

10.4028/www.scientific.net/SSP.178-179.35

Citation:

A. Misiuk et al., "Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals", Solid State Phenomena, Vols. 178-179, pp. 35-40, 2011

Online since:

August 2011

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Price:

$35.00

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