Gettering and Defect Engineering in Semiconductor Technology XIV

Volumes 178-179

doi: 10.4028/

Paper Title Page

Authors: Nikolai Yu. Arutyunov, Mohamed Elsayed, Reinhard Krause-Rehberg, Valentin V. Emtsev, Gagik A. Oganesyan, Vitalii V. Kozlovski

Abstract: The changes of the positron lifetime and loss/recovery of shallow donor states in n-FZ-Si:P material irradiated at the room temperature with...

Authors: Andreas J. Schriefl, Sokratis Sgouridis, Werner Schustereder, Werner Puff

Abstract: The microscopic nature of hydrogen decorated defect complexes created by proton implantation in silicon and subsequental annealing is not...

Authors: Mojmir Meduna, Ondřej Caha, Jiri Ruzicka, Silvie Bernatovà, Milan Svoboda, Jiří Buršík

Abstract: We report on study of oxygen precipitates grown in Czochralski silicon wafers investigated by x-ray diffraction in Bragg reflection geometry...

Authors: Rajko Buchwald, Stefan Köstner, Felix Dreckschmidt, H.J. Möller

Abstract: Elaborated characterization tools play an important role for the further improvement of solar material and the development of solar cells....

Authors: N.A. Sobolev, Anton E. Kalyadin, Elena I. Shek, V.I. Vdovin, David I. Tetel`baum, Lyudmila I. Khirunenko

Abstract: Luminescent and structural properties of silicon layers with dislocation-related luminescence have been studied. Silicon ions (100 keV) were...

Authors: Aurimas Uleckas, Eugenijus Gaubas, Joan Marc Rafi, Jiahe Chen, De Ren Yang, Hidenori Ohyama, Eddy Simoen, Jan Vanhellemont

Abstract: Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration...

Authors: Johannes Will, Alexander Gröschel, Christoph Bergmann, Andreas Magerl

Abstract: The measurement of Pendellösungs oscillations was used to observe the time dependent nucleation of oxygen in a Czochralski grown single...

Authors: Alexander Gröschel, Johannes Will, Christoph Bergmann, Hannes Grillenberger, Stefan Eichler, Max Scheffer Czygan, Andreas Magerl

Abstract: A defocused Laue diffractometer setup operating with the white beam of a high energy X-ray tube has been used for a topographic...

Authors: Łukasz Gelczuk, Maria Dabrowska-Szata, Mariusz Sochacki, Jan Szmidt

Abstract: Deep-level defects in 4H-SiC Schottky diodes were studied using deep level transient spectroscopy (DLTS). The epitaxial layers, doped with N...

Authors: Johannes G. Laven, Reinhard Job, Werner Schustereder, Hans Joachim Schulze, Franz Josef Niedernostheide, Holger Schulze, Lothar Frey

Abstract: By introducing radiation damage and hydrogen and successively annealing with low thermal budgets, hydrogen-related donors are created in...


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